参数资料
型号: M27C256B-45C1TR
厂商: STMICROELECTRONICS
元件分类: PROM
英文描述: 32K X 8 OTPROM, 45 ns, PQCC32
封装: LEAD FREE, PLASTIC, LCC-32
文件页数: 24/24页
文件大小: 205K
代理商: M27C256B-45C1TR
M27C256B
Device operation
2.4
System considerations
The power switching characteristics of Advance CMOS EPROMs require careful decoupling
of the devices. The supply current, ICC, has three segments that are of interest to the system
designer: the standby current level, the active current level, and transient current peaks that
are produced by the falling and rising edges of E. The magnitude of this transient current
peaks is dependent on the capacitive and inductive loading of the device at the output. The
associated transient voltage peaks can be suppressed by complying with the two line output
control and by properly selected decoupling capacitors. It is recommended that a 0.1F
ceramic capacitor be used on every device between VCC and VSS. This should be a high
frequency capacitor of low inherent inductance and should be placed as close to the device
as possible. In addition, a 4.7F bulk electrolytic capacitor should be used between VCC and
VSS for every eight devices. The bulk capacitor should be located near the power supply
connection point. The purpose of the bulk capacitor is to overcome the voltage drop caused
by the inductive effects of PCB traces.
2.5
Programming
When delivered (and after each erasure for UV EPROM), all bits of the M27C256B are in the
"1" state. Data is introduced by selectively programming "0"s into the desired bit locations.
Although only "0"s will be programmed, both "1"s and "0"s can be present in the data word.
The only way to change a '0' to a '1' is by die exposure to ultraviolet light (UV EPROM). The
M27C256B is in the programming mode when VPP input is at 12.75V, G is at VIH and E is
pulsed to VIL. The data to be programmed is applied to 8 bits in parallel to the data output
pins. The levels required for the address and data inputs are TTL. VCC is specified to be
6.25V ± 0.25 V.
2.6
PRESTO II programming algorithm
PRESTO II Programming Algorithm allows to program the whole array with a guaranteed
margin, in a typical time of 3.5 seconds. Programming with PRESTO II involves the
application of a sequence of 100s program pulses to each byte until a correct verify occurs
(see Figure 4.). During programming and verify operation, a MARGIN MODE circuit is
automatically activated in order to guarantee that each cell is programmed with enough
margin. No overprogram pulse is applied since the verify in MARGIN MODE provides
necessary margin to each programmed cell.
相关PDF资料
PDF描述
M27C256B-15C3TR 32K X 8 OTPROM, 150 ns, PQCC32
M27C256B-15XB6 32K X 8 OTPROM, 150 ns, PDIP28
M27C512-45XN1 512 Kbit (64K x8) UV EPROM and OTP EPROM
M27C512-60F1 512 Kbit (64K x8) UV EPROM and OTP EPROM
M27C512-70XC1 512 Kbit (64K x8) UV EPROM and OTP EPROM
相关代理商/技术参数
参数描述
M27C256B-45XC1 功能描述:可擦除可编程ROM 256K (32KX8) 45ns RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92
M27C256B-45XF1 功能描述:可擦除可编程ROM 256K (32KX8) 45ns RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92
M27C256B-70C1 功能描述:可擦除可编程ROM 256K (32KX8) 70ns RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92
M27C256B-70C6 功能描述:可擦除可编程ROM 256K (32KX8) 70ns RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92
M27C256B-70N1 功能描述:可擦除可编程ROM DISC BY STM 01/02 TSOP-28 32KX8 70NS RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92