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参数资料
| 型号： | M27C512-25XB3X |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 64K X 8 OTPROM, 150 ns, PDIP28 |
| 封装： | 0.600 INCH, PLASTIC, DIP-28 |
| 文件页数： | 16/18页 |
| 文件大小： | 115K |
| 代理商： | M27C512-25XB3X |
7/18
M27C512
Table 9. Programming Mode DC Characteristics (1)
(TA =25 °C; VCC = 6.25V ± 0.25V; VPP = 12.75V ± 0.25V)
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
Symbol
Parameter
Test Conditi on
Min
Max
Unit
ILI
Input Leakage Current
VIL ≤ VIN ≤ VIH
±10
A
ICC
Supply Current
50
mA
IPP
Program Current
E= VIL
50
mA
VIL
Input Low Voltage
–0.3
0.8
V
VIH
Input High Voltage
2
VCC + 0.5
V
VOL
Output Low Voltage
IOL = 2.1mA
0.4
V
VOH
Output High Voltage TTL
IOH =–1mA
3.6
V
VID
A9 Voltage
11.5
12.5
V
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, the product features a 2 line con-
trol function which accommodates the use of mul-
tiple memory connection. The two line control
function allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
For the most efficient use of these two control
lines, E should be decoded and used as the prima-
ry device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all deselect-
ed memory devices are in their low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.
System Considerations
The power switching characteristics of Advanced
CMOS EPROMs require careful decoupling of the
devices. The supply current, ICC, has three seg-
ments that are of interest to the system designer:
the standby current level, the active current level,
and transient current peaks that are produced by
the falling and rising edges of E. The magnitude of
the transient current peaks is dependent on the
capacitive and inductive loading of the device at
the output. The associated transient voltage peaks
can be suppressed by complying with the two line
output control and by properly selected decoupling
capacitors. It is recommended that a 0.1
F ceram-
ic capacitor be used on every device between VCC
and VSS. This should be a high frequency capaci-
tor of low inherent inductance and should be
placed as close to the device as possible. In addi-
tion, a 4.7
F bulk electrolytic capacitor should be
used between VCC and VSS for every eight devic-
es. The bulk capacitor should be located near the
power supply connection point.The purpose of the
bulk capacitor is to overcome the voltage drop
caused by the inductive effects of PCB traces.
相关PDF资料 |
PDF描述 |
|---|---|
| M27C512-45N3X | 64K X 8 OTPROM, 45 ns, PDSO28 |
| M27C512-25XC3X | 64K X 8 OTPROM, 150 ns, PQCC32 |
| M27C512-45XF6X | 64K X 8 UVPROM, 45 ns, CDIP28 |
| M27C800-70M1 | 512K X 16 OTPROM, 70 ns, PDSO44 |
| M27C801-70B6X | 1M X 8 OTPROM, 70 ns, PDIP32 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M27C512-25XF1 | 制造商:STMicroelectronics 功能描述:EPROM, 64K x 8, 28 Pin, Ceramic, DIP |
| M27C512-45C1 | 功能描述:可擦除可编程ROM 512K (64Kx8) 45ns RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92 |
| M27C512-45XF1 | 功能描述:可擦除可编程ROM 512K (64Kx8) 45ns RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92 |
| M27C512-70C1 | 功能描述:可擦除可编程ROM 512K (64Kx8) 70ns RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92 |
| M27C512-70C6 | 功能描述:可擦除可编程ROM 512K (64Kx8) 70ns RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92 |
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