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参数资料
| 型号： | M27C800-120XM6TR |
| 厂商： | 意法半导体 |
| 英文描述： | Octal Buffer/Driver With 3-State Outputs 20-TSSOP -40 to 85 |
| 中文描述： | 8兆1兆x8或512KB的x16紫外线存储器和OTP存储器 |
| 文件页数： | 5/18页 |
| 文件大小： | 171K |
| 代理商： | M27C800-120XM6TR |
5/18
M27C800
Table 7. Read Mode DC Characteristics
(1)
(T
A
= 0 to 70 °C or –40 to 85 °C; V
CC
= 5V ± 5% or 5V ± 10%; V
PP
= V
CC
)
Symbol
Parameter
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Maximum DC voltage on Output is V
CC
+ 0.5V.
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
±1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
±10
μA
I
CC
Supply Current
E = V
IL
, G = V
IL
,
I
OUT
= 0mA, f = 8MHz
70
mA
E = V
IL
, G = V
IL
,
I
OUT
= 0mA, f = 5MHz
50
mA
I
CC1
Supply Current (Standby) TTL
E = V
IH
1
mA
I
CC2
Supply Current (Standby) CMOS
E > V
CC
– 0.2V
50
μA
I
PP
Program Current
V
PP
= V
CC
10
μA
V
IL
Input Low Voltage
–0.3
0.8
V
V
IH(2)
Input High Voltage
2
V
CC
+ 1
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage TTL
I
OH
= –400μA
2.4
V
Table 6. Capacitance
(1)
(T
A
= 25 °C, f = 1 MHz)
Symbol
Note: 1. Sampled only, not 100% tested.
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance (except BYTEV
PP
)
V
IN
= 0V
10
pF
Input Capacitance (BYTEV
PP
)
V
IN
= 0V
120
pF
C
OUT
Output Capacitance
V
OUT
= 0V
12
pF
Standby Mode
The M27C800 has a standby mode which reduces
the supply current from 50mA to 100μA. The
M27C800 is placed in the standby mode by apply-
ing a CMOS high signal to the E input. When in the
standby mode, the outputs are in a high imped-
ance state, independent of the G input.
相关PDF资料 |
PDF描述 |
|---|---|
| M27C800-120XF6TR | 8 Mbit 1Mb x8 or 512Kb x16 UV EPROM and OTP EPROM |
| M27C800-120XF1TR | Octal Buffer/Driver With 3-State Outputs 20-TSSOP -40 to 85 |
| M27C800-120M6TR | Octal Buffer/Driver With 3-State Outputs 20-TSSOP -40 to 85 |
| M27C801-100B | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| M27C801-120F | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M27C801-100B1 | 功能描述:可擦除可编程ROM 8M (1Mx8) 100ns RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92 |
| M27C801-100B1 | 制造商:STMicroelectronics 功能描述:PROM OTP CMOS 8MB 27C801 DIP32 |
| M27C801-100F1 | 功能描述:可擦除可编程ROM 8M (1Mx8) 100ns RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92 |
| M27C801-100F1 | 制造商:STMicroelectronics 功能描述:IC EPROM CMOS 8MB 27C801 DIP32 |
| M27C801-100F6 | 功能描述:可擦除可编程ROM 8M (1Mx8) 100ns RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92 |
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