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参数资料
| 型号： | M27C801-100B1TR |
| 厂商： | 意法半导体 |
| 英文描述： | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| 中文描述： | 8兆1兆× 8紫外线存储器和OTP存储器 |
| 文件页数： | 6/16页 |
| 文件大小： | 153K |
| 代理商： | M27C801-100B1TR |
M27C801
6/16
Figure 5. Read Mode AC Waveforms
AI01583B
tAXQX
tEHQZ
A0-A19
E
G
Q0-Q7
tAVQV
tGHQZ
tGLQV
tELQV
VALID
Hi-Z
VALID
Table 8B. Read Mode AC Characteristics
(1)
(T
A
= 0 to 70 °C or –40 to 85 °C; V
CC
= 5V ± 10%)
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
Symbol
Alt
Parameter
Test Condition
M27C801
Unit
-80
-100/-120/-150
Min
Max
Min
Max
t
AVQV
t
ACC
Address Valid to Output Valid
E = V
IL
, GV
PP
= V
IL
80
100
ns
t
ELQV
t
CE
Chip Enable Low to Output Valid
GV
PP
= V
IL
80
100
ns
t
GLQV
t
OE
Output Enable Low to Output
Valid
E = V
IL
40
50
ns
t
EHQZ (2)
t
DF
Chip Enable High to Output Hi-Z
GV
PP
= V
IL
0
35
0
40
ns
t
GHQZ (2)
t
DF
Output Enable High to Output
Hi-Z
E = V
IL
0
35
0
40
ns
t
AXQX
t
OH
Address Transition to Output
Transition
E = V
IL
, GV
PP
= V
IL
0
0
ns
System Considerations
The power switching characteristics of Advanced
CMOS EPROMs require careful decoupling of the
devices. The supply current, I
CC
, has three seg-
ments that are of interest to the system designer:
the standby current level, the active current level,
and transient current peaks that are produced by
the falling and rising edges of E. The magnitude of
the transient current peaks is dependent on the
capacitive and inductive loading of the device at
the output. The associated transient voltage peaks
can be suppressed by complying with the two line
output control and by properly selected decoupling
capacitors. It is recommended that a 0.1μF ceram-
ic capacitor be used on every device between V
CC
and V
SS
. This should be a high frequency capaci-
tor of low inherent inductance and should be
placed as close to the device as possible. In addi-
tion, a 4.7μF bulk electrolytic capacitor should be
used between V
CC
and V
SS
for every eight devic-
es. The bulk capacitor should be located near the
power supply connection point. The purpose of the
bulk capacitor is to overcome the voltage drop
caused by the inductive effects of PCB traces.
相关PDF资料 |
PDF描述 |
|---|---|
| M27C801-100B1X | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| M27C801-100B6TR | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| M27C801-100B6X | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| M27C801-100F | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| M27C801-100F1 | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M27C801-100F1 | 功能描述:可擦除可编程ROM 8M (1Mx8) 100ns RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92 |
| M27C801-100F1 | 制造商:STMicroelectronics 功能描述:IC EPROM CMOS 8MB 27C801 DIP32 |
| M27C801-100F6 | 功能描述:可擦除可编程ROM 8M (1Mx8) 100ns RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92 |
| M27C801-100K1 | 功能描述:可擦除可编程ROM 8M (1Mx8) 100ns RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92 |
| M27C801-100K1 | 制造商:STMicroelectronics 功能描述:PROM OTP CMOS 8MB 27C801 PLCC32 |
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