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参数资料
| 型号： | M27C801-120F |
| 厂商： | 意法半导体 |
| 英文描述： | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| 中文描述： | 8兆1兆× 8紫外线存储器和OTP存储器 |
| 文件页数： | 7/16页 |
| 文件大小： | 153K |
| 代理商： | M27C801-120F |
7/16
M27C801
Table 9. Programming Mode DC Characteristics
(1)
(T
A
= 25 °C; V
CC
= 6.25V ± 0.25V; V
PP
= 12.75V ± 0.25V)
Symbol
Parameter
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Table 10. MARGIN MODE AC Characteristics
(1)
(T
A
= 25 °C; V
CC
= 6.25V ± 0.25V; V
PP
= 12.75V ± 0.25V)
Symbol
Alt
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
V
IL
≤
V
IN
≤
V
IH
±10
μ
A
I
CC
Supply Current
50
mA
I
PP
Program Current
E = V
IL
50
mA
V
IL
Input Low Voltage
–0.3
0.8
V
V
IH
Input High Voltage
2
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage TTL
I
OH
= –1mA
3.6
V
V
ID
A9 Voltage
11.5
12.5
V
Parameter
Test Condition
Min
Max
Unit
t
A9HVPH
t
AS9
V
A9
High to V
PP
High
2
μs
t
VPHEL
t
VPS
V
PP
High to Chip Enable Low
2
μs
t
A10HEH
t
AS10
V
A10
High to Chip Enable High (Set)
1
μs
t
A10LEH
t
AS10
V
A10
Low to Chip Enable High (Reset)
1
μs
t
EXA10X
t
AH10
Chip Enable Transition to V
A10
Transition
1
μs
t
EXVPX
t
VPH
Chip Enable Transition to V
PP
Transition
2
μs
t
VPXA9X
t
AH9
V
PP
Transition to V
A9
Transition
2
μs
Programming
When delivered (and after each erasure for UV
EPROM), all bits of the M27C801 are in the ’1’
state. Data is introduced by selectively program-
ming ’0’s into the desired bit locations. Although
only ’0’ will be programmed, both ’1’s and ’0’s can
be present in the data word. The only way to
change a ’0’ to a ’1’ is by die exposure to ultraviolet
light (UV EPROM). The M27C801 is in the pro-
gramming mode when V
PP
input is at 12.75V and
E is pulsed to V
IL
. The data to be programmed is
applied to 8 bits in parallel to the data output pins.
The levels required for the address and data in-
puts are TTL. V
CC
is specified to be 6.25V ±
0.25V.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M27C801-120F1 | 功能描述:可擦除可编程ROM 8M (1Mx8) 120ns RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92 |
| M27C801-120K1 | 功能描述:可擦除可编程ROM 8M (1Mx8) 120ns RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92 |
| M27C801-150F1 | 功能描述:可擦除可编程ROM DIP-32 1MX8 150NS RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92 |
| M27C801-55K1 | 功能描述:可擦除可编程ROM 8M (1Mx8) 55ns RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92 |
| M27C801-80F1 | 功能描述:可擦除可编程ROM 8M (1Mx8) 80ns RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92 |
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