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参数资料
| 型号： | M27C801-45F6TR |
| 厂商： | 意法半导体 |
| 英文描述： | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| 中文描述： | 8兆1兆× 8紫外线存储器和OTP存储器 |
| 文件页数： | 10/16页 |
| 文件大小： | 153K |
| 代理商： | M27C801-45F6TR |
M27C801
10/16
Electronic Signature
The Electronic Signature (ES) mode allows the
reading out of a binary code from an EPROM that
will identify its manufacturer and type. This mode
is intended for use by programming equipment to
automatically match the device to be programmed
with its corresponding programming algorithm.
The ES mode is functional in the 25°C ± 5°C am-
bient temperature range that is required when pro-
gramming the M27C801. To activate the ES
mode, the programming equipment must force
11.5V to 12.5V on address line A9 of the
M27C801. Two identifier bytes may then be se-
quenced from the device outputs by toggling ad-
dress line A0 from V
IL
to V
IH
. All other address
lines must be held at V
IL
during Electronic Signa-
ture mode. Byte 0 (A0 = V
IL
) represents the man-
ufacturer code and byte 1 (A0 = V
IH
) the device
identifier code. For the STMicroelectronics
M27C801, these two identifier bytes are given in
Table 4 and can be read-out on outputs Q7 to Q0.
ERASURE OPERATION (applies to UV EPROM)
The erasure characteristics of the M27C801 is
such that erasure begins when the cells are ex-
posed to light with wavelengths shorter than ap-
proximately 4000 . It should be noted that
sunlight and some type of fluorescent lamps have
wavelengths in the 3000-4000 range.
Research shows that constant exposure to room
level fluorescent lighting could erase a typical
M27C801 in about 3 years, while it would take ap-
proximately 1 week to cause erasure when ex-
posed to direct sunlight. If the M27C801 is to be
exposed to these types of lighting conditions for
extended periods of time, it is suggested that
opaque labels be put over the M27C801 window to
prevent unintentional erasure. The recommended
erasure procedure for the M27C801 is exposure to
short wave ultraviolet light which has wavelength
2537 . The integrated dose (i.e. UV intensity x
exposure time) for erasure should be a minimum
of 30 W-sec/cm
2
. The erasure time with this dos-
age is approximately 30 to 40 minutes using an ul-
traviolet lamp with 12000 μW/cm
2
power rating.
The M27C801 should be placed within 2.5 cm (1
inch) of the lamp tubes during the erasure. Some
lamps have a filter on their tubes which should be
removed before erasure.
相关PDF资料 |
PDF描述 |
|---|---|
| M27C801-45F1X | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| M27C801-45F1TR | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| M27C801-45B6X | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| M27C801-45B6TR | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| M27C801-45B1X | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M27C801-55K1 | 功能描述:可擦除可编程ROM 8M (1Mx8) 55ns RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92 |
| M27C801-80F1 | 功能描述:可擦除可编程ROM 8M (1Mx8) 80ns RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92 |
| M27C801-90F1 | 功能描述:可擦除可编程ROM 8M (1Mx8) 90ns RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92 |
| M27F51212C1 | 制造商:ST MICROE 功能描述:NEW |
| M27-LID-PLATED | 功能描述:罩类、盒类及壳类产品 PLTD LID FOR M27 RoHS:否 制造商:Bud Industries 产品:Boxes 外部深度:6.35 mm 外部宽度:6.35 mm 外部高度:2.56 mm NEMA 额定值: IP 等级: 材料:Acrylonitrile Butadiene Styrene (ABS) 颜色:Red |
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