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参数资料
| 型号： | M27C801-70N6TR |
| 厂商： | 意法半导体 |
| 英文描述： | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| 中文描述： | 8兆1兆× 8紫外线存储器和OTP存储器 |
| 文件页数： | 1/16页 |
| 文件大小： | 153K |
| 代理商： | M27C801-70N6TR |
1/16
September 2000
M27C801
8 Mbit (1Mb x 8) UV EPROM and OTP EPROM
I
5V ± 10% SUPPLY VOLTAGE in READ
OPERATION
I
ACCESS TIME: 45ns
I
LOW POWER CONSUMPTION:
– Active Current 35mA at 5MHz
– Standby Current 100μA
I
PROGRAMMING VOLTAGE: 12.75V ± 0.25V
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PROGRAMMING TIME: 50μs/word
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 42h
DESCRIPTION
The M27C801 is an 8 Mbit EPROM offered in the
two ranges UV (ultra violet erase) and OTP (one
time programmable). It is ideally suited for applica-
tions where fast turn-around and pattern experi-
mentation are important requirements and is
organized as 1,048,576 by 8 bits.
The FDIP32W (window ceramic frit-seal package)
has transparent lid which allows the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written to the
device by following the programming procedure.
For applications where the content is programmed
only one time and erasure is not required, the
M27C801 is offered in PDIP32, PLCC32 and
TSOP32 (8 x 20 mm) packages.
1
32
FDIP32W (F)
PLCC32 (K)
TSOP32 (N)
8 x 20 mm
32
1
PDIP32 (B)
Figure 1. Logic Diagram
AI01267
20
A0-A19
Q0-Q7
VCC
M27C801
VSS
8
GVPP
E
相关PDF资料 |
PDF描述 |
|---|---|
| M27C801-70N6X | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| M27C801-80B1TR | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| M27C801-80B1X | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| M27C801-80B6TR | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| M27C801-120B1TR | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M27C801-80F1 | 功能描述:可擦除可编程ROM 8M (1Mx8) 80ns RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92 |
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| M27LV101200N1 | 制造商:ST MICRO 功能描述:* |
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