参数资料
型号: M27V102-90N1TR
厂商: 意法半导体
英文描述: 1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM
中文描述: 1兆位64Kb的× 16低压紫外线存储器和OTP存储器
文件页数: 5/15页
文件大小: 116K
代理商: M27V102-90N1TR
Symbol
Parameter
TestCondition
Min
Max
Unit
I
LI
Input Leakage Current
0V
V
IN
V
CC
±
10
μ
A
I
LO
Output Leakage Current
0V
V
OUT
V
CC
±
10
μ
A
I
CC
Supply Current
E = V
IL
, G = V
IL
, I
OUT
= 0mA,
f = 5MHz, V
CC
3.6V
15
mA
I
CC1
Supply Current (Standby) TTL
E = V
IH
1
mA
I
CC2
Supply Current (Standby)
CMOS
E > V
CC
– 0.2V,V
CC
3.6V
20
μ
A
I
PP
Program Current
V
PP
= V
CC
10
μ
A
V
IL
Input Low Voltage
–0.3
0.8
V
V
IH
(2)
Input High Voltage
2
V
CC
+ 1
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High VoltageTTL
I
OH
= –400
μ
A
2.4
V
Output High Voltage CMOS
I
OH
= –100
μ
A
V
CC
– 0.7V
V
Notes:
1. V
must be applied simultaneouslywith or before V
PP
and removed simultaneously or after V
PP
.
2. Maximum DC voltage on Output is V
CC
+0.5V
Table7. Read Mode DC Characteristics
(1)
(T
A
= 0 to 70
°
C or –40 to 85
°
C; V
CC
= 3.3V
±
10%;V
PP
= V
CC
)
Symbol
Alt
Parameter
Test Condition
M27V102
Unit
-90
(3)
-100
Min
Max
Min
Max
t
AVQV
t
ACC
Address Valid to Output Valid
E = V
IL
, G = V
IL
90
100
ns
t
ELQV
t
CE
Chip Enable Low to Output Valid
G = V
IL
90
100
ns
t
GLQV
t
OE
Output Enable Low to Output Valid
E = V
IL
45
50
ns
t
EHQZ(2)
t
DF
Chip Enable High to Output Hi-Z
G = V
IL
0
30
0
30
ns
t
GHQZ(2)
t
DF
Output Enable High to Output Hi-Z
E = V
IL
0
30
0
30
ns
t
AXQX
t
OH
Address Transition to Output Transition
E = V
IL
, G = V
IL
0
0
ns
Notes:
1. V
must be applied simultaneouslywith or before V
PP
and removed simultaneously with or afterV
PP.
2. Sampled only,not 100% tested.
3. Speed obtained with High Speed AC measurementconditions.
Table8A. ReadMode AC Characteristics
(1)
(T
A
= 0 to 70
°
C or –40 to 85
°
C; V
CC
= 3.3V
±
10%;V
PP
= V
CC
)
5/15
M27V102
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