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参数资料
| 型号： | M27V160-100F1TR |
| 厂商： | 意法半导体 |
| 英文描述： | 2.5-V/3.3-V 16-Bit Bus Transceivers With 3-State Outputs 48-TSSOP -40 to 85 |
| 中文描述： | 16兆位的2Mb x8或1兆x16低压紫外线可擦写可编程只读存储器和OTP存储器 |
| 文件页数： | 1/15页 |
| 文件大小： | 103K |
| 代理商： | M27V160-100F1TR |
1/15
March 2000
M27V160
16 Mbit (2Mb x8 or 1Mb x16)
Low Voltage UV EPROM and OTP EPROM
I
3V to 3.6V LOW VOLTAGE in READ
OPERATION
I
ACCESS TIME: 100ns
I
BYTE-WIDE or WORD-WIDE
CONFIGURABLE
I
16 Mbit MASK ROM REPLACEMENT
I
LOW POWER CONSUMPTION
– Active Current 30mA at 8MHz
– Standby Current 60
μ
A
I
PROGRAMMING VOLTAGE: 12.5V
±
0.25V
I
PROGRAMMING TIME: 50
μ
s/word
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: B1h
DESCRIPTION
The M27V160 is a low voltage16 Mbit EPROM of-
fered in the two ranges UV (ultra violet erase) and
OTP (one time programmable). It is ideally suited
for microprocessorsystems requiringlarge data or
program storage. It is organised as either 2 Mbit
words of 8 bit or 1 Mbit words of 16 bit. The pin-out
is compatible with a 16 Mbit Mask ROM.
The M27V160 operates in the read mode with a
supply voltage as low as 3V. The decrease in op-
erating power allows either a reduction of the size
of the battery or an increase in the time between
battery recharges.
The FDIP42W (window ceramic frit-seal package)
has a transparent lid which allows the user to ex-
pose the chipto ultraviolet light to erase the bit pat-
tern. A new pattern can then be written rapidly to
the device by following the programming proce-
dure.
For applications wherethe content is programmed
only one time and erasure is not required, the
M27V160 is offered inPDIP42 and SO44 packag-
es.
44
1
1
42
1
42
FDIP42W (F)
SO44 (M)
PDIP42 (B)
Figure 1. Logic Diagram
AI01898
20
A0-A19
BYTEVPP
Q0-Q14
VCC
M27V160
G
E
VSS
15
Q15A–1
相关PDF资料 |
PDF描述 |
|---|---|
| M27V160-100F6TR | 2.5-V/3.3-V 16-Bit Bus Transceivers With 3-State Outputs 48-SSOP -40 to 85 |
| M27V160-100M1TR | 2.5-V/3.3-V 16-Bit Bus Transceivers With 3-State Outputs 48-TVSOP -40 to 85 |
| M27V160-100M6TR | 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-100XF1TR | 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-100XF6TR | 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M27V160-100F6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM |
| M27V160-100F6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-100K1 | 功能描述:可擦除可编程ROM 2Mx8 or 1Mx16 100ns RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92 |
| M27V160-100K6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM |
| M27V160-100M1 | 功能描述:可擦除可编程ROM 2Mx8 or 1Mx16 100ns RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92 |
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