- 您现在的位置：买卖IC网 > PDF目录358997 > M27V160-100XB1TR (意法半导体) 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM PDF资料下载
参数资料
| 型号： | M27V160-100XB1TR |
| 厂商： | 意法半导体 |
| 英文描述： | 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 16兆位的2Mb x8或1兆x16低压紫外线可擦写可编程只读存储器和OTP存储器 |
| 文件页数： | 10/15页 |
| 文件大小： | 103K |
| 代理商： | M27V160-100XB1TR |
M27V160
10/15
On-Board Programming
The M27V160 can be directly programmed in the
application circuit. See the relevant Application
Note AN620.
Electronic Signature
The Electronic Signature (ES) mode allows the
reading out of a binary code from an EPROM that
will identify its manufacturer and type. This mode
is intended for use by programming equipment to
automatically matchthe device to be programmed
with its corresponding programming algorithm.
The ES mode is functional in the 25
°
C
±
5
°
C am-
bient temperaturerange that is required when pro-
gramming theM27V160. To activatethe ES mode,
the programming equipment must force 11.5V to
12.5V on address line A9 of the M27V160, with
V
PP
= V
CC
= 5V.
Two identifier bytes may then be sequenced from
the device outputs by toggling address line A0
from V
IL
to V
IH
. All other address lines must be
held at V
IL
during Electronic Signature mode.
Byte 0 (A0 = V
IL
) represents the manufacturer
code and byte 1 (A0 = V
IH
) the device identifier
code. Forthe STMicroelectronics M27V160, these
two identifier bytes aregiven inTable 4 andcan be
read-out on outputs Q7 to Q0. Note that the
M27V160 and M27C160 have the same identifier
bytes.
ERASUREOPERATION (applies to UV EPROM)
The erasure characteristics of the M27V160 is
such that erasure begins when the cells are ex-
posed to light with wavelengths shorter than ap-
proximately 4000 . It should be noted that
sunlight and some type of fluorescent lamps have
wavelengths in the 3000-4000 range. Research
shows that constant exposure to room level fluo-
rescent lighting could erase a typical M27V160 in
about 3 years, while it would takeapproximately 1
week to cause erasure when exposed to direct
sunlight. If the M27V160 is to be exposed to these
types of lighting conditions for extended periods of
time, it is suggested that opaque labelsbeput over
the M27V160 window to prevent unintentional era-
sure. The recommended erasure procedure for
M27V160 is exposure to short wave ultraviolet
light which has a wavelength of 2537 . The inte-
grated dose (i.e. UV intensity x exposure time) for
erasure should be a minimum of 30 W-sec/cm
2
.
The erasure time with this dosage is approximate-
ly 30 to 40 minutes using an ultraviolet lamp with
12000
μ
W/cm
2
power rating. The M27V160
should be placed within 2.5cm (1 inch) of the lamp
tubes during the erasure. Somelamps have a filter
on their tubes which should be removed before
erasure.
相关PDF资料 |
PDF描述 |
|---|---|
| M27V160-100XB6TR | 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-150M1TR | CAP .47UF 250/275VAC ECQ-UL |
| M27V160-150XB1TR | 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-150XB6TR | 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-200XB1TR | 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M27V160-100XB6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM |
| M27V160-100XB6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-100XF1 | 功能描述:可擦除可编程ROM 2Mx8 or 1Mx16 100ns RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92 |
| M27V160-100XF1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-100XF6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM |
发布紧急采购，3分钟左右您将得到回复。