参数资料
型号: M27V201-100XK6TR
厂商: 意法半导体
英文描述: 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM
中文描述: 2兆位的256Kb × 8低压紫外线可擦写可编程只读存储器和OTP存储器
文件页数: 1/15页
文件大小: 103K
代理商: M27V201-100XK6TR
1/15
May 1998
M27V201
2 Mbit (256Kb x 8) Low Voltage UV EPROM and OTP EPROM
I
LOW VOLTAGE READ OPERATION:
3V to 3.6V
I
FAST ACCESS TIME: 120ns
I
LOW POWER CONSUMPTION:
– Active Current 15mA at 5MHz
– Standby Current 20
μ
A
I
PROGRAMMING VOLTAGE: 12.75V
±
0.25V
I
PROGRAMMING TIME: 100
μ
s/byte (typical)
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 61h
DESCRIPTION
The M27V201 is a low voltage 2 Mbit EPROM of-
fered in the two ranges UV (ultra violet erase) and
OTP (one time programmable). It is ideally suited
for microprocessorsystems requiringlarge data or
program storage and is organised as 262,144 by 8
bits.
The M27V201 operates in the read mode with a
supply voltage as low as 3V. The decrease in op-
erating power allows either a reduction of the size
of the battery or an increase in the time between
battery recharges.
The FDIP32W (window ceramic frit-seal package)
has a transparent lid which allow the user to ex-
pose the chipto ultraviolet light to erase the bit pat-
tern.
Figure 1. Logic Diagram
AI00693B
18
A0-A17
P
Q0-Q7
VPP
VCC
M27V201
G
E
VSS
8
Table 1. Signal Names
A0-A17
Address Inputs
Q0-Q7
Data Outputs
E
Chip Enable
G
Output Enable
P
Program
V
PP
Program Supply
V
CC
Supply Voltage
V
SS
Ground
1
32
32
1
FDIP32W (F)
PDIP32 (B)
PLCC32 (K)
TSOP32 (N)
8 x 20 mm
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