参数资料
型号: M27V201-120XK6TR
厂商: 意法半导体
英文描述: 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM
中文描述: 2兆位的256Kb × 8低压紫外线可擦写可编程只读存储器和OTP存储器
文件页数: 6/15页
文件大小: 103K
代理商: M27V201-120XK6TR
M27V201
6/15
Figure 5. Read Mode AC Waveforms
AI00719B
tAXQX
tEHQZ
A0-A17
E
G
Q0-Q7
tAVQV
tGHQZ
tGLQV
tELQV
VALID
Hi-Z
VALID
Table 8B. Read Mode AC Characteristics
(1)
(T
A
= 0 to 70
°
C or –40 to 85
°
C; V
CC
= 3.3V
±
10%; V
PP
= Vcc)
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
Symbol
Alt
Parameter
Test Condition
M27V201
Unit
-180
-200
Min
Max
Min
Max
t
AVQV
t
ACC
Address Valid to Output Valid
E = V
IL
, G = V
IL
180
200
ns
t
ELQV
t
CE
Chip Enable Low to Output Valid
G = V
IL
180
200
ns
t
GLQV
t
OE
Output Enable Low to Output Valid
E = V
IL
80
90
ns
t
EHQZ(2)
t
DF
Chip Enable High to Output Hi-Z
G = V
IL
0
50
0
70
ns
t
GHQZ(2)
t
DF
Output Enable High to Output Hi-Z
E = V
IL
0
50
0
70
ns
t
AXQX
t
OH
Address Transition to Output
Transition
E = V
IL
, G = V
IL
0
0
ns
Programming
The M27V201 has been designed to be fully com-
patible withthe M27C2001 and hasthe same elec-
tronic signature. As a result the M27V201 can be
programmed as the M27C2001 on the same pro-
gramming equipments by applying 12.75V on V
PP
and 6.25V on V
CC
by the use of the same PRES-
TO II algorithm. When delivered (and after each
erasure for UV EPROM), all bits of the M27V201
are inthe ’1’state.Data is introduced by selectively
programming ’0’s into the desired bit locations. Al-
though only ’0’s will be programmed, both ’1’s and
’0’s can be presentin the data word. The only way
to change a ’0’to a ’1’is by die exposition to ultra-
violet light (UV EPROM). The M27V201 is in the
programming mode when V
PP
input is at 12.75V,
E is at V
IL
and P is pulsed to V
IL
. The data to be
programmed is applied to 8 bits in parallel to the
data output pins. The levels required for the ad-
dress and data inputs are TTL. V
CC
is specified to
be 6.25V
±
0.25V.
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