参数资料
型号: M27V512-120K6TR
厂商: 意法半导体
英文描述: 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
中文描述: 512千位64Kb的x8低压紫外线EPROM和检察官办公室存储器
文件页数: 1/16页
文件大小: 108K
代理商: M27V512-120K6TR
1/16
May 1998
M27V512
512 Kbit (64Kb x8) Low Voltage UV EPROM and OTP EPROM
I
LOW VOLTAGE READ OPERATION:
3V to 3.6V
I
FAST ACCESS TIME: 100ns
I
LOW POWER CONSUMPTION:
– Active Current 10mA at 5MHz
– Standby Current 10
μ
A
I
PROGRAMMING VOLTAGE: 12.75V
±
0.25V
I
PROGRAMMING TIME: 100
μ
s/byte (typical)
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 3Dh
DESCRIPTION
The M27V512 is a low voltage 512 Kbit EPROM
offered in the two ranges UV (ultra viloet erase)
and OTP (one time programmable). It is ideally
suited for microprocessor systems and is orga-
nized as 65,536 by 8 bits.
The M27V512 operates in the read mode with a
supply voltage as low as 3V. The decrease in op-
erating power allows either a reduction of the size
of the battery or an increase in the time between
battery recharges.
The FDIP28W (window ceramic frit-seal package)
has transparent lid which allows the user to ex-
pose the chipto ultraviolet light to erase the bit pat-
tern. A new pattern can then be written to the
device by following the programming procedure.
For applications wherethe content is programmed
only one time and erasure is not required, the
M27V512 is offered in PDIP28, PLCC32 and
TSOP28 (8 x 13.4 mm) packages.
Figure 1. Logic Diagram
AI00732B
16
Q0-Q7
VCC
M27V512
GVPP
VSS
8
A0-A15
E
Table 1. Signal Names
A0-A15
Address Inputs
Q0-Q7
Data Outputs
E
Chip Enable
GV
PP
Output Enable
V
CC
Supply Voltage
V
SS
Ground
1
28
28
1
FDIP28W (F)
PDIP28 (B)
PLCC32 (K)
TSOP28 (N)
8 x 13.4mm
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