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参数资料
| 型号： | M27V512-200F1TR |
| 厂商： | 意法半导体 |
| 英文描述： | Quadruple 2-Input Positive-NAND Buffers/Drivers 14-PDIP 0 to 70 |
| 中文描述： | 512千位64Kb的x8低压紫外线EPROM和检察官办公室存储器 |
| 文件页数： | 10/16页 |
| 文件大小： | 108K |
| 代理商： | M27V512-200F1TR |
M27V512
10/16
On-Board Programming
The M27V512 can be directly programmed in the
application circuit. See the relevant Application
Note AN620.
Electronic Signature
The Electronic Signature (ES) mode allows the
reading out of a binary code from an EPROM that
will identify its manufacturer and type. This mode
is intended for use by programming equipment to
automatically matchthe device to be programmed
with its corresponding programming algorithm.
The ES mode is functional in the 25
°
C
±
5
°
C am-
bient temperaturerange that is required when pro-
gramming theM27V512. To activatethe ES mode,
the programming equipment must force 11.5V to
12.5V on address line A9 of the M27V512. Two
identifier bytes may then be sequenced from the
device outputs by toggling address line A0 from
V
IL
to V
IH
. All other address lines must be held at
V
IL
during Electronic Signature mode.
Byte 0 (A0=V
IL
) represents themanufacturer code
and byte 1 (A0=V
IH
) the device identifier code. For
the STMicroelectronics M27V512, these two iden-
tifier bytes are given in Table 4 and can be read-
out on outputs Q0 to Q7. Note that the M27V512
and M27C512 have the same identifier bytes.
ERASURE OPERATION (applies for UV EPROM)
The erasure characteristics of the M27V512 is
such that erasure begins when the cells are ex-
posed to light with wavelengths shorter than ap-
proximately 4000 . It should be noted that
sunlight and some type of fluorescent lamps have
wavelengths in the 3000-4000 range.
Research shows that constant exposure to room
level fluorescent lighting could erase a typical
M27V512 in about 3 years, while it would take ap-
proximately 1 week to cause erasure when ex-
posed to direct sunlight. If the M27V512 is to be
exposed to these types of lighting conditions for
extended periods of time, it is suggested that
opaque labelsbe put over theM27V512 window to
prevent unintentional erasure. The recommended
erasure procedure for theM27V512 is exposureto
short wave ultraviolet light which has wavelength
2537 . The integrated dose (i.e. UV intensity x
exposure time) for erasure should be a minimum
of 15 W-sec/cm
2
. The erasure time with this dos-
age is approximately 15 to 20 minutes using an ul-
traviolet lamp with 12000
μ
W/cm
2
power rating.
The M27V512 should be placed within 2.5 cm (1
inch) of the lamp tubes during the erasure. Some
lamps have a filter on their tubes which should be
removed before erasure.
相关PDF资料 |
PDF描述 |
|---|---|
| M27V512-200B6TR | 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V512-200B1TR | 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V512-150N6TR | 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V512-150N1TR | 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V512-150K6TR | 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M27V512-200F6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V512-200K1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V512-200K6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V512-200N1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V512-200N6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
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