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参数资料
| 型号： | M27V512-200K6TR |
| 厂商： | 意法半导体 |
| 英文描述： | 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 512千位64Kb的x8低压紫外线EPROM和检察官办公室存储器 |
| 文件页数： | 4/16页 |
| 文件大小： | 108K |
| 代理商： | M27V512-200K6TR |
M27V512
4/16
System Considerations
The power switching characteristics of Advanced
CMOS EPROMs requirecareful decoupling of the
devices. The supply current, I
CC
, has three seg-
ments that are of interest to the system designer:
the standby current level, the active current level,
and transient current peaks that are produced by
the fallingand rising edgesof E. The magnitude of
the transient current peaks is dependent on the
capacitive and inductive loading of the device at
the output.
The associated transient voltage peaks can be
suppressed by complying with the two line output
control and by properly selected decoupling ca-
pacitors. It is recommended that a 0.1
μ
F ceramic
capacitor be used on every device between V
CC
and V
SS
. This should be a high frequency capaci-
tor of low inherent inductance and should be
placed as close to the device as possible. In addi-
tion, a 4.7
μ
F bulk electrolytic capacitor should be
used between V
CC
and V
SS
for every eight devic-
es. The bulk capacitor should be located near the
power supplyconnection point.The purpose of the
bulk capacitor is to overcome the voltage drop
caused by the inductive effects of PCB traces.
Table 5. AC Measurement Conditions
High Speed
Standard
Input Rise and Fall Times
≤
10ns
≤
20ns
Input Pulse Voltages
0 to 3V
0.4V to 2.4V
Input and Output Timing Ref. Voltages
1.5V
0.8V and 2V
Figure 3. Testing Input Output Waveform
AI01822
3V
High Speed
0V
1.5V
2.4V
Standard
0.4V
2.0V
0.8V
Figure 4. AC Testing Load Circuit
AI01823B
1.3V
OUT
CL
CL= 30pF for High Speed
CL= 100pF for Standard
CLincludes JIG capacitance
3.3k
1N914
DEVICE
UNDER
TEST
Table 6. Capacitance
(1)
(T
A
= 25
°
C, f = 1 MHz)
Symbol
Note: 1. Sampled only, not 100% tested.
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
12
pF
相关PDF资料 |
PDF描述 |
|---|---|
| M27V512-200N6TR | 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V512-200K1TR | 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V512-200F6TR | 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V512-200F1TR | Quadruple 2-Input Positive-NAND Buffers/Drivers 14-PDIP 0 to 70 |
| M27V512-200B6TR | 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M27V512-200N1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V512-200N6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V800 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V800-100B1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V800-100F1 | 功能描述:可擦除可编程ROM 1Mx8 or 512Kx16 100n RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92 |
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