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参数资料
| 型号： | M27V512-200N1TR |
| 厂商： | 意法半导体 |
| 英文描述： | 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 512千位64Kb的x8低压紫外线EPROM和检察官办公室存储器 |
| 文件页数： | 9/16页 |
| 文件大小： | 108K |
| 代理商： | M27V512-200N1TR |
9/16
M27V512
PRESTO IIB Programming Algorithm
PRESTO IIB Programming Algorithm allows the
whole array to be programmed with a guaranteed
margin, in a typical time of 6.5 seconds. This can
be achieved with STMicroelectronics M27V512
due to several design innovations described in the
M27V512 datasheet to improve programming effi-
ciency and to provide adequate marginfor reliabil-
ity. Before starting the programming the internal
MARGIN MODE circuit is set in order to guarantee
that each cell is programmed with enough margin.
Then a sequence of100
μ
s program pulses are ap-
plied to each byte until a correct verify occurs. No
overprogram pulses are applied since the verify in
MARGIN MODE provides the necessary margin.
Program Inhibit
Programming of multiple M27V512s in parallel
with different data is also easily accomplished. Ex-
cept for E, alllike inputs including GV
PP
of thepar-
allel M27V512 may be common. A TTL low level
pulse applied to a M27V512’s E input, with V
PP
at
12.75V, will program that M27V512. A high level E
input inhibits the other M27V512s from being pro-
grammed.
Program Verify
A verify (read) should be performed on the pro-
grammed bits to determine that theywere correct-
ly programmed. The verify is accomplished with G
at V
IL
. Data should be verified with t
ELQV
after the
falling edge of E.
Figure 7. Programming and Verify Modes AC Waveforms
AI00737
tVPLEL
PROGRAM
DATA IN
A0-A15
E
GVPP
Q0-Q7
DATA OUT
tAVEL
tQVEL
tVCHEL
tVPHEL
tEHQX
tEHVPX
tELEH
tELQV
tEHAX
tEHQZ
VERIFY
VALID
VCC
Figure 8. Programming Flowchart
AI00738B
n = 0
Last
Addr
VERIFY
E = 100
μ
s Pulse
++n
= 25
++ Addr
VCC= 6.25V, VPP= 12.75V
FAIL
CHECK ALL BYTES
1st: VCC= 6V
2nd: VCC= 4.2V
YES
NO
YES
NO
YES
NO
SET MARGIN MODE
RESET MARGINMODE
相关PDF资料 |
PDF描述 |
|---|---|
| M27V512-200K6TR | 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V512-200N6TR | 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V512-200K1TR | 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V512-200F6TR | 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V512-200F1TR | Quadruple 2-Input Positive-NAND Buffers/Drivers 14-PDIP 0 to 70 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M27V512-200N6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V800 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V800-100B1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V800-100F1 | 功能描述:可擦除可编程ROM 1Mx8 or 512Kx16 100n RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92 |
| M27V800-100F1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM |
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