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参数资料
| 型号： | M27V800-120K1TR |
| 厂商： | 意法半导体 |
| 英文描述： | 8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 8兆1兆x8或512KB的x16低压紫外线可擦写可编程只读存储器和OTP存储器 |
| 文件页数： | 10/16页 |
| 文件大小： | 108K |
| 代理商： | M27V800-120K1TR |
M27V800
10/16
On-Board Programming
The M27V800 can be directly programmed in the
application circuit. See the relevant Application
Note AN620.
Electronic Signature
The Electronic Signature (ES) mode allows the
reading out of a binary code from an EPROM that
will identify its manufacturer and type. This mode
is intended for use by programming equipment to
automatically matchthe device to be programmed
with its corresponding programming algorithm.
The ES mode is functional in the 25
°
C
±
5
°
C am-
bient temperaturerange that is required when pro-
gramming theM27V800. To activatethe ES mode,
the programming equipment must force 11.5V to
12.5V on address line A9 of the M27V800, with
V
PP
=V
CC
=5V. Two identifier bytes may then be
sequenced fromthe device outputs by toggling ad-
dress line A0 from V
IL
to V
IH
. All other address
lines must be held at V
IL
during Electronic Signa-
ture mode.
Byte 0 (A0=V
IL
) represents themanufacturer code
and byte 1 (A0=V
IH
) the device identifier code. For
the STMicroelectronics M27V800, these two iden-
tifier bytes are given in Table 4 and can be read-
out on outputs Q0 to Q7. Note that the M27V800
and M27C800 have the same identifier bytes.
ERASUREOPERATION (applies to UV EPROM)
The erasure characteristics of the M27V800 is
such that erasure begins when the cells are ex-
posed to light with wavelengths shorter than ap-
proximately 4000 . It should be noted that
sunlight and some type of fluorescent lamps have
wavelengths in the 3000-4000 range. Research
shows that constant exposure to room level fluo-
rescent lighting could erase a typical M27V800 in
about 3 years, while it would takeapproximately 1
week to cause erasure when exposed to direct
sunlight. If the M27V800 is to be exposed to these
types of lighting conditions for extended periods of
time, it is suggested that opaque labelsbeput over
the M27V800 window to prevent unintentional era-
sure. The recommended erasure procedure for
M27V800 is exposure to short wave ultraviolet
light which has a wavelength of 2537 . The inte-
grated dose (i.e. UV intensity x exposure time) for
erasure should be a minimum of 30 W-sec/cm
2
.
The erasure time with this dosage is approximate-
ly 30 to 410 minutes using an ultraviolet lamp with
12000
μ
W/cm
2
power rating. The M27V800
should be placed within 2.5cm (1 inch) of the lamp
tubes during the erasure. Somelamps have a filter
on their tubes which should be removed before
erasure.
相关PDF资料 |
PDF描述 |
|---|---|
| M27V800-120M1TR | 8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V800-120XB1TR | 8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V800-150XB1TR | 8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V800-150XF1TR | 8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V800-150XK1TR | 8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M27V800-120M1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V800-120XB1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V800-120XF1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V800-120XK1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V800-120XM1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM |
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