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参数资料
| 型号： | M27V800-150K1TR |
| 厂商： | 意法半导体 |
| 英文描述： | 8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 8兆1兆x8或512KB的x16低压紫外线可擦写可编程只读存储器和OTP存储器 |
| 文件页数： | 5/16页 |
| 文件大小： | 108K |
| 代理商： | M27V800-150K1TR |
5/16
M27V800
Table 7. Read Mode DC Characteristics
(1)
(T
A
= 0 to 70
°
C; V
CC
= 3.3V
±
10%; V
PP
= V
CC
)
Symbol
Parameter
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Maximum DC voltage on Output is V
CC
+0.5V.
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
±
1
μ
A
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
±
10
μ
A
I
CC
Supply Current
E = V
IL
, G = V
IL
, I
OUT
= 0mA,
f = 8MHz, V
CC
≤
3.6V
30
mA
E = V
IL
, G = V
IL
, I
OUT
= 0mA,
f = 5MHz, V
CC
≤
3.6V
20
mA
I
CC1
Supply Current (Standby) TTL
E = V
IH
1
mA
I
CC2
Supply Current (Standby) CMOS
E > V
CC
– 0.2V, V
CC
≤
3.6V
20
μ
A
I
PP
Program Current
V
PP
= V
CC
10
μ
A
V
IL
Input Low Voltage
–0.3
0.8
V
V
IH(2)
Input High Voltage
2
V
CC
+ 1
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage TTL
I
OH
= –400
μ
A
2.4
V
For the most efficient use of these two control
lines, Eshould be decodedand used as theprima-
ry device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system controlbus. This ensures that all deselect-
ed memory devices are intheir low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.
System Considerations
The power switching characteristics of Advanced
CMOS EPROMsrequire carefulldecoupling of the
supplies to the devices. The supply current ICC
has three segments of importance to the system
designer: the standby current, the active current
and the transient peaks that are produced by the
falling and rising edges of E.
The magnitude of the transient current peaks is
dependant on the capacititive and inductive load-
ing of the device outputs. The associated transient
voltage peaks can be supressed by complying
with the two line output control and by properly se-
lected decoupling capacitors. It is recommended
that a 0.1
μ
F ceramic capacitor is used on every
device between V
CC
and V
SS
. This should be a
high frequency type of low inherent inductance
and should be placed as close as possible to the
device. In addition, a 4.7
μ
F electrolytic capacitor
should be used between V
CC
and V
SS
for every
eight devices. This capacitor should be mounted
near the power supply connection point. The pur-
pose of this capacitor is to overcome the voltage
drop caused by the inductive effects of PCB trac-
es.
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| M27V800-150B1TR | 8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V800-120XK1TR | 8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M27V800-150M1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V800-150XB1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V800-150XF1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V800-150XK1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V800-150XM1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM |
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