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参数资料
| 型号： | M27W202-100N6TR |
| 厂商： | 意法半导体 |
| 英文描述： | 2 Mbit 128Kb x16 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 2兆位128KB的x16低压紫外线可擦写可编程只读存储器和OTP存储器 |
| 文件页数： | 7/15页 |
| 文件大小： | 103K |
| 代理商： | M27W202-100N6TR |
7/15
M27W202
Table 9. Programming Mode DC Characteristics
(1)
(T
A
= 25
°
C; V
CC
= 6.25V
±
0.25V; V
PP
= 12.75V
±
0.25V)
Symbol
Parameter
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Table 10. ProgrammingMode AC Characteristics
(1)
(T
A
= 25
°
C; V
CC
= 6.25V
±
0.25V; V
PP
= 12.75V
±
0.25V)
Symbol
Alt
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0
≤
V
IN
≤
V
IH
±
10
μ
A
I
CC
Supply Current
50
mA
I
PP
Program Current
E = V
IL
50
mA
V
IL
Input Low Voltage
–0.3
0.8
V
V
IH
Input High Voltage
2
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage TTL
I
OH
= –400
μ
A
2.4
V
V
ID
A9 Voltage
11.5
12.5
V
Parameter
Min
Max
Unit
t
AVPL
t
AS
Address Valid to Program Low
2
μ
s
t
QVPL
t
DS
Input Valid to Program Low
2
μ
s
t
VPHPL
t
VPS
V
PP
High to Program Low
2
μ
s
t
VCHPL
t
VCS
V
CC
High to Program Low
2
μ
s
t
ELPL
t
CES
Chip Enable Low to Program Low
2
μ
s
t
PLPH
t
PW
Program Pulse Width
95
105
μ
s
t
PHQX
t
DH
Program High to Input Transition
2
μ
s
t
QXGL
t
OES
Input Transition to Output Enable Low
2
μ
s
t
GLQV
t
OE
Output Enable Low to Output Valid
100
ns
t
GHQZ(2)
t
DFP
Output Enable High to Output Hi-Z
0
130
ns
t
GHAX
t
AH
Output Enable High to Address Transition
0
ns
Programming
When delivered, all bits of the M27W202 are in the
’1’ state. Data is introduced by selectively pro-
gramming ’0’s into the desired bit locations. Al-
though only ’0’s will be programmed, both ’1’sand
’0’s can be present in the data word. The
M27W202 is in the programming mode when V
PP
input is at 12.75V,E isat V
IL
andPis pulsedtoV
IL
.
The data to beprogrammed is applied to 16 bits in
parallel, to the data output pins. The levels re-
quired for the address and data inputs are TTL.
V
CC
is specified to be 6.25V
±
0.25V.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M27W202-120B6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 128Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27W202-120F6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 128Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27W202-120K6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 128Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27W202-120N6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 128Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27W202-150B6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 128Kb x16 Low Voltage UV EPROM and OTP EPROM |
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