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参数资料
| 型号： | M28C17-90MS1T |
| 厂商： | 意法半导体 |
| 元件分类： | EEPROM |
| 英文描述： | 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION |
| 中文描述： | 16K的2K × 8的并行EEPROM，带有软件数据保护 |
| 文件页数： | 8/17页 |
| 文件大小： | 165K |
| 代理商： | M28C17-90MS1T |
Symbol
Alt
Parameter
Test Condition
Min
Max
Unit
t
AVWL
t
AS
Address Valid to Write Enable Low
E = V
IL
, G = V
IH
0
ns
t
AVEL
t
AS
Address Valid to Chip Enable Low
G = V
IH
, W = V
IL
0
ns
t
ELWL
t
CES
Chip Enable Low to Write Enable Low
G = V
IH
0
ns
t
GHWL
t
OES
Output Enable High to Write Enable
Low
E = V
IL
0
ns
t
GHEL
t
OES
Output Enable High to Chip Enable Low
W = V
IL
0
ns
t
WLEL
t
WES
Write Enable Low to Chip Enable Low
G = V
IH
0
ns
t
WLAX
t
AH
Write Enable Low to Address Transition
50
ns
t
ELAX
t
AH
Chip Enable Low to Address Transition
50
ns
t
WLDV
t
DV
Write Enable Low to Input Valid
E = V
IL
, G = V
IH
1
μ
s
t
ELDV
t
DV
Chip Enable Low to Input Valid
G = V
IH
, W = V
IL
1
μ
s
t
ELEH
t
WP
Chip Enable Low to Chip Enable High
50
ns
t
WHEH
t
CEH
Write Enable High to Chip Enable High
0
ns
t
WHGL
t
OEH
Write Enable High to Output Enable
Low
0
ns
t
EHGL
t
OEH
Chip Enable High to Output Enable Low
0
ns
t
EHWH
t
WEH
Chip Enable High to Write Enable High
0
ns
t
WHDX
t
DH
Write Enable High to Input Transition
0
ns
t
EHDX
t
DH
Chip Enable High to Input Transition
0
ns
t
WHWL
t
WPH
Write Enable High to Write Enable Low
50
ns
t
WLWH1
t
WP
Write Enable Low to Write Enable High
50
ns
t
WHWH
t
BLC
Byte Load Repeat Cycle Time
0.15
100
μ
s
t
WHRH
t
WC
Write Cycle Time
3
ms
t
WHRL
t
DB
Write Enable High to Ready/Busy Low
Note 1
150
ns
t
EHRL
t
DB
Chip Enable High to Ready/Busy Low
Note 1
150
ns
t
DVWH
t
DS
Data Valid before Write Enable High
50
ns
t
DVEH
t
DS
Data Valid before Chip Enable High
50
ns
Note
: 1. With a 3.3 k
external pull-up resistor.
Table 9. Write Mode AC Characteristics
(T
A
= 0 to 70
°
C or –40 to 85
°
C; V
CC
= 4.5V to 5.5V)
8/17
M28C17
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| M28C17-90MS6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION |
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