参数资料
型号: M28C256-15BS1T
厂商: 意法半导体
元件分类: EEPROM
英文描述: 256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection
中文描述: 256千位(的32KB × 8)与软件数据保护并行的EEPROM
文件页数: 11/21页
文件大小: 132K
代理商: M28C256-15BS1T
Symbol
Alt
Parameter
TestCondition
M28256-W
Unit
Min
Max
t
AVWL
t
AS
Address Valid to Write Enable Low
E = V
IL
, G = V
IH
0
ns
t
AVEL
t
AS
Address Valid to Chip Enable Low
G = V
IH
, W = V
IL
0
ns
t
ELWL
t
CES
Chip Enable Low to Write Enable Low
G = V
IH
0
ns
t
GHWL
t
OES
Output Enable High to Write Enable
Low
E = V
IL
0
ns
t
GHEL
t
OES
Output Enable High to Chip Enable Low
W = V
IL
0
ns
t
WLEL
t
WES
Write Enable Low to Chip Enable Low
G = V
IH
0
ns
t
WLAX
t
AH
Write Enable Low to Address Transition
70
ns
t
ELAX
t
AH
Chip Enable Low to Address Transition
70
ns
t
WLDV
t
DV
Write Enable Low to Input Valid
E = V
IL
, G = V
IH
1
μ
s
t
ELDV
t
DV
Chip Enable Low to Input Valid
G = V
IH
, W = V
IL
1
μ
s
t
ELEH
t
WP
Chip Enable Low to Chip Enable High
100
ns
t
WHEH
t
CEH
Write Enable High to Chip Enable High
0
ns
t
WHGL
t
OEH
Write Enable High to Output Enable
Low
0
ns
t
EHGL
t
OEH
Chip Enable High to Output Enable Low
0
ns
t
EHWH
t
WEH
Chip Enable High to Write Enable High
0
ns
t
WHDX
t
DH
Write Enable High to Input Transition
0
ns
t
EHDX
t
DH
Chip Enable High to Input Transition
0
ns
t
WHWL
t
WPH
Write Enable High to Write Enable Low
100
ns
t
WLWH
t
WP
Write Enable Low to Write Enable High
100
ns
t
WHWH
t
BLC
Byte Load Repeat Cycle Time
0.2
150
μ
s
t
WHRH
t
WC
Write Cycle Time
5
ms
t
EL
, t
WL
E or W Input Filter Pulse Width
Note 1
10
ns
t
DVWH
t
DS
Data Valid before Write Enable High
50
ns
t
DVEH
t
DS
Data Valid before Chip Enable High
50
ns
Note:
1. Characterized only but not testedin production.
Table13. Write Mode AC Characteristics
(T
A
= 0 to 70
°
C or –40 to85
°
C; V
CC
= 2.7V to 3.6V)
11/21
M28256
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