- 您现在的位置：买卖IC网 > PDF目录359008 > M28C256-25MS6T (意法半导体) 256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection PDF资料下载
参数资料
| 型号： | M28C256-25MS6T |
| 厂商： | 意法半导体 |
| 元件分类： | EEPROM |
| 英文描述： | 256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
| 中文描述： | 256千位（的32KB × 8）与软件数据保护并行的EEPROM |
| 文件页数： | 8/21页 |
| 文件大小： | 132K |
| 代理商： | M28C256-25MS6T |
Symbol
Parameter
Min
Max
Unit
t
PUR
Time Delay to Read Operation
1
μ
s
t
PUW
Time Delay to Write Operation (once V
CC
≥
V
WI
)
5
ms
V
WI
Write Inhibit Threshold
3.0
4.2
V
Note:
1. Sampled only,not 100% tested.
Table7. PowerUp Timingfor M28256
(1)
(T
A
= 0 to 70
°
C or –40 to85
°
C; V
CC
= 4.5V to 5.5V)
Symbol
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
10
μ
A
I
LO
Output Leakage Current
0V
≤
V
IN
≤
V
CC
10
μ
A
I
CC(1)
Supply Current (CMOS inputs)
E = V
IL
, G = V
IL
, f = 5 MHz, V
CC
= 3.3V
15
mA
E = V
IL
, G = V
IL
, f = 5 MHz, V
CC
= 3.6V
15
mA
I
CC2
(1)
Supply Current (Standby) CMOS
E > V
CC
–0.3V
20
μ
A
V
IL
Input Low Voltage
– 0.3
0.6
V
V
IH
Input High Voltage
2
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 2.1 mA
0.2 V
CC
V
V
OH
Output High Voltage
I
OH
= –400
μ
A
0.8 V
CC
V
Note:
1. All I/O’sopen circuit.
Table8. Read Mode DC Characteristicsfor M28256-W
(T
A
= 0 to 70
°
C or –40 to85
°
C; V
CC
= 2.7V to 3.6V)
Symbol
Parameter
Min
Max
Unit
t
PUR
Time Delay to Read Operation
1
μ
s
t
PUW
Time Delay to Write Operation (once V
CC
≥
V
WI
)
10
ms
V
WI
Write Inhibit Threshold
1.5
2.5
V
Note:
1. Sampled only,not 100% tested.
Table9. PowerUp Timingfor M28256-W
(1)
(T
A
= 0 to 70
°
C or –40 to85
°
C; V
CC
= 2.7V to 3.6V)
8/21
M28256
相关PDF资料 |
PDF描述 |
|---|---|
| M28C256-25NS6T | 256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
| M28C256-25WKA6T | 256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
| M28C256-15KA1T | 256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
| M28C256-15KA6T | 256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
| M28C256-15WMS6T | 256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M28C256-25NS1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
| M28C256-25NS6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
| M28C256-25WBS1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
| M28C256-25WBS6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
| M28C256-25WKA1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
发布紧急采购，3分钟左右您将得到回复。