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参数资料
| 型号： | M28F101-120N3 |
| 厂商： | 意法半导体 |
| 英文描述： | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| 中文描述： | 1 MB的128K的× 8，芯片擦除闪存 |
| 文件页数： | 7/23页 |
| 文件大小： | 197K |
| 代理商： | M28F101-120N3 |
Read Mode.
The Read Mode is the default at
power up or may be set-up by writing 00h to the
command register. Subsequent read operations
outputdatafromthememory.Thememoryremains
in the Read Mode until a new command is written
to the command register.
ElectronicSignatureMode.
In orderto select the
correct erase and programmingalgorithms for on-
board programming, the manufacturerand device
codesmay be read directly. It isnot neccessaryto
apply a high voltage to A9 when using the com-
mand register. The Electronic Signature Mode is
set-upbywriting 90hto the commandregister. The
following read cycles, with address inputs00000h
or 00001h,output the manufactureror devicetype
codes.The command is terminatedby writing an-
othervalid command to the command register (for
exampleReset).
Symbol
Alt
Parameter
TestCondition
M28F101
Unit
-70
-90
-100
V
CC
=5V
±
5%
V
CC
=5V
±
10%
V
CC
=5V
±
10%
SRAM
Interface
EPROM
Interface
EPROM
Interface
Min
Max
Min
Max
Min
Max
t
WHGL
Write Enable High to
Output EnableLow
6
6
6
μ
s
t
AVAV
t
RC
Read Cycle Time
E = V
IL
, G = V
IL
70
90
100
ns
t
AVQV
t
ACC
Address Validto
Output Valid
E = V
IL
, G = V
IL
70
90
100
ns
t
ELQX(1)
t
LZ
Chip Enable Low to
Output Transition
G = V
IL
0
0
0
ns
t
ELQV
t
CE
Chip Enable Low to
Output Valid
G = V
IL
70
90
100
ns
t
GLQX(1)
t
OLZ
Output EnableLow to
Output Transition
E = V
IL
0
0
0
ns
t
GLQV
t
OE
Output EnableLow to
Output Valid
E = V
IL
40
40
45
ns
t
EHQZ(1)
Chip Enable High to
Output Hi-Z
G = V
IL
0
30
0
45
0
45
ns
t
GHQZ
(1)
t
DF
Output EnableHigh to
Output Hi-Z
E = V
IL
0
30
0
30
0
30
ns
t
AXQX
t
OH
Address Transitionto
Output Transition
E = V
IL
, G = V
IL
0
0
0
ns
Note:
1. Sampled only, not 100% tested
Table 9A. Read Only Mode AC Characteristics
(T
A
= 0 to 70
°
C, –40 to 85
°
C or –40 to 125
°
C; 0V
≤
V
PP
≤
6.5V)
7/23
M28F101
相关PDF资料 |
PDF描述 |
|---|---|
| M28F101-120N1 | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-120K6 | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-120K3 | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-100XP6 | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-100XP3 | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M28F101-120N6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-120P1 | 功能描述:闪存 RO 511-M29F010B90P DIP-32 128KX8 120NS RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M28F101-120P3 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-120P6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-120XK1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
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