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参数资料
| 型号： | M28F101-120XN1 |
| 厂商： | 意法半导体 |
| 英文描述： | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| 中文描述： | 1 MB的128K的× 8，芯片擦除闪存 |
| 文件页数： | 1/23页 |
| 文件大小： | 197K |
| 代理商： | M28F101-120XN1 |
M28F101
1 Mb (128K x 8, Chip Erase) FLASH MEMORY
April 1997
1/23
AI00666B
17
A0-A16
W
DQ0-DQ7
VPP
VCC
M28F101
G
E
VSS
8
Figure 1. Logic Diagram
5V
±
10% SUPPLY VOLTAGE
12V PROGRAMMING VOLTAGE
FASTACCESS TIME: 70ns
BYTEPROGRAMING TIME: 10
μ
s typical
ELECTRICALCHIP ERASE in 1s RANGE
LOW POWER CONSUMPTION
– Stand-byCurrent: 100
μ
Amax
10,000ERASE/PROGRAM CYCLES
INTEGRATED ERASE/PROGRAM-STOP
TIMER
OTPCOMPATIBLE PACKAGES and PINOUTS
ELECTRONIC SIGNATURE
– ManufacturerCode: 20h
– DeviceCode: 07h
DESCRIPTION
The M28F101 FLASH Memory is a non-volatile
memory which may be erased electrically at the
chip level and programmed byte-by-byte. It is or-
ganisedas128Kbytesof8bits.It usesacommand
register architectureto select the operating modes
and thus provides a simple microprocessor inter-
face.The M28F101FLASHMemory is suitable for
applications where the memory has to be repro-
grammed in the equipment. The access time of
70ns makes the device suitable for use in high
speedmicroprocessor systems.
A0-A16
Address Inputs
DQ0-DQ7
Data Inputs / Outputs
E
Chip Enable
G
Output Enable
W
Write Enable
V
PP
Program Supply
V
CC
Supply Voltage
V
SS
Ground
Table 1. Signal Names
PLCC32 (K)
32
1
PDIP32 (P)
TSOP32 (N)
8 x 20 mm
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相关代理商/技术参数 |
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|---|---|
| M28F101-120XN3 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-120XN6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-120XP1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-120XP3 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-120XP6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
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