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参数资料
| 型号： | M28F101-90P1 |
| 厂商： | 意法半导体 |
| 英文描述： | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| 中文描述： | 1 MB的128K的× 8，芯片擦除闪存 |
| 文件页数： | 4/23页 |
| 文件大小： | 197K |
| 代理商： | M28F101-90P1 |
Command
Cycles
1st Cycle
2nd Cycle
Operation
A0-A16
DQ0-DQ7
Operation
A0-A16
DQ0-DQ7
Read
1
Write
X
00h
Electronic
Signature
(2)
2
Write
X
90h
Read
00000h
20h
Read
00001h
07h
Setup Erase/
2
Write
X
20h
Erase
Write
X
20h
Erase Verify
2
Write
A0-A16
A0h
Read
X
Data Output
Setup Program/
2
Write
X
40h
Program
Write
A0-A16
Data Input
Program Verify
2
Write
X
C0h
Read
X
Data Output
Reset
2
Write
X
FFh
Write
X
FFh
Notes:
1. X = V
or V
.
2. Refer also to the Electronic Signaturetable.
Table 5. Commands
(1)
Identifier
A0
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
Hex Data
Manufacturer’s Code
V
IL
0
0
1
0
0
0
0
0
20h
Device Code
V
IH
0
0
0
0
0
1
1
1
07h
Table 4. Electronic Signature
V
PP
Operation
E
G
W
A9
DQ0 - DQ7
Read Only
V
PPL
Read
V
IL
V
IL
V
IH
A9
Data Output
Output Disable
V
IL
V
IH
V
IH
X
Hi-Z
Standby
V
IH
X
X
X
Hi-Z
Electronic Signature
V
IL
V
IL
V
IH
V
ID
Codes
Read/Write
(2)
V
PPH
Read
V
IL
V
IL
V
IH
A9
Data Output
Write
V
IL
V
IH
V
IL
Pulse
A9
Data Input
Output Disable
V
IL
V
IH
V
IH
X
Hi-Z
Standby
V
IH
X
X
X
Hi-Z
Notes:
1. X = V
or V
.
2. Refer also tothe Command table.
Table 3. Operations
(1)
4/23
M28F101
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| M28F101-90XN6 | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
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相关代理商/技术参数 |
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|---|---|
| M28F101-90P3 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-90P6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-90XK1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-90XK3 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-90XK6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
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