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参数资料
| 型号： | M28F101-90XK3 |
| 厂商： | 意法半导体 |
| 英文描述： | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| 中文描述： | 1 MB的128K的× 8，芯片擦除闪存 |
| 文件页数： | 12/23页 |
| 文件大小： | 197K |
| 代理商： | M28F101-90XK3 |
Symbol
Alt
Parameter
M28F101
-150
V
CC
=5V
±
10%
EPROM
Interface
Min
1
1
150
Unit
-120
-200
V
CC
=5V
±
10%
EPROM
Interface
Min
1
1
120
V
CC
=5V
±
10%
EPROM
Interface
Min
1
1
200
Max
Max
Max
t
VPHEL
t
VPHWL
t
WHWH3
t
AVWL
t
AVEL
t
WLAX
t
ELAX
t
ELWL
t
WLEL
V
PP
High to Chip Enable Low
V
PP
High to Write Enable Low
Write Cycle Time
μ
s
μ
s
ns
t
WC
t
AS
Address Validto Write Enable Low
Address Validto Chip Enable Low
Write Enable Low to Address Transition
0
0
0
0
0
0
75
ns
ns
ns
t
AH
60
60
Chip Enable Low to Address Transition
Chip EnableLow to Write Enable Low
Write Enable Low to Chip Enable Low
80
20
0
80
20
0
80
20
0
ns
ns
ns
t
CS
t
GHWL
Output EnableHigh to Write Enable
Low
Output EnableHigh to Chip Enable Low
0
0
0
μ
s
t
GHEL
t
DVWH
t
DVEH
0
0
0
μ
s
ns
ns
t
DS
Input Valid to WriteEnable High
Input Valid to Chip Enable High
Write Enable Low to Write Enable High
(Write Pulse)
Chip EnableLow to Chip EnableHigh
(Write Pulse)
Write Enable High toInput Transition
50
50
50
50
50
50
t
WLWH
t
WP
60
60
60
ns
t
ELEH
70
70
70
ns
t
WHDX
t
EHDX
t
WHWH1
t
EHEH1
t
WHWH2
t
WHEH
t
EHWH
t
WHWL
t
EHEL
t
DH
10
10
10
ns
Chip Enable High to Input Transition
Duration of Program Operation
Duration of Program Operation
10
9.5
9.5
10
9.5
9.5
10
9.5
9.5
ns
μ
s
μ
s
ms
ns
ns
ns
Duration of Erase Operation
Write Enable High toChip Enable High
Chip Enable High to Write Enable High
Write Enable High toWrite EnableLow
9.5
0
0
20
9.5
0
0
20
9.5
0
0
20
t
CH
t
WPH
Chip Enable High to Chip Enable Low
Write Enable High toOutput Enable
Low
Chip Enable High to Output EnableLow
Addess Validto data Output
20
20
20
ns
t
WHGL
6
6
6
μ
s
t
EHGL
t
AVQV
t
ELQX(1)
t
ELQV
t
GLQX(1)
t
GLQV
t
EHQZ(1)
t
GHQZ(1)
t
AXQX
Note:
1. Sampled only,not 100% tested.
6
6
6
μ
s
ns
t
ACC
t
LZ
t
CE
t
OLZ
t
OE
120
150
200
Chip EnableLow to Output Transition
Chip EnableLow to Output Valid
Output EnableLow to Output Transition
0
0
0
ns
ns
ns
120
150
200
0
0
0
Output EnableLow to Output Valid
Chip Enable High to Output Hi-Z
50
50
55
55
60
60
ns
ns
t
DF
t
OH
Output EnableHigh to Output Hi-Z
Address Transitionto Output Transition
30
35
40
ns
ns
0
0
0
Table 10B. Read/WriteMode AC Characteristics,W and E Controlled
(T
A
= 0 to 70
°
C, –40to 85
°
C or –40 to 125
°
C)
12/23
M28F101
相关PDF资料 |
PDF描述 |
|---|---|
| M28F101-90XK6 | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-90XN3 | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-120P1 | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-70XN1 | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-90XN1 | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M28F101-90XK6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-90XN1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-90XN3 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-90XN6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-90XP1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
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