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参数资料
| 型号： | M28W160BB100-NT |
| 厂商： | 意法半导体 |
| 英文描述： | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| 中文描述： | 16兆位（1兆x16插槽，引导块）3V电源快闪记忆体 |
| 文件页数： | 33/45页 |
| 文件大小： | 343K |
| 代理商： | M28W160BB100-NT |
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M28W160BT, M28W160BB
REVISION HISTORY
Table 21. Document Revision History
Date
Version
Revision Details
July 1999
-01
First Issue
9/21/99
-02
Parameter Block Erase Typ. specification change
Added t
WHGL
and t
EHGL
10/20/99
-03
μBGA Package Mechanical Data change
Daisy Chain diagrams, Package and PCB Connections, added
2/09/00
-04
Access Time conditions change
Reset mode function change to remove Power Down mode
Instructions description clarification
Change of Parameter Block Erase value
Block Protections description clarification
Security Code Area definition change
I
DD2
and I
DD3
value change
t
PLRH
value change
Program, Erase, Command Interface flowcharts clarification
Package Mechanical Data change
μBGA Package Outline diagram change
4/19/00
-05
Daisy Chain part numbering defined
μBGA Daisy Chain diagrams, Package and PCB Connections re-designed
5/17/00
-06
μBGA Package Outline diagram change
1/15/01
-07
TFBGA Package added
CFI specification clarification
3/06/01
-08
Document type : from Preliminary Data to Data Sheet
70ns Speed Class added
3/12/01
-09
4/13/01
-10
Completely rewritten and restructured, 85ns speed class added.
5/29/01
-11
Corrections made to CFI data.
31-May-2001
-12
Corrections to TFBGA46 package dimensions.
30-Oct-2001
-13
V
DDQ
Maximum changed to 3.3V
Commands Table, Read CFI Query Address on 1st cycle changed to ‘X’ (Table 3)
t
WHEL
description clarified (Table 13)
16-May-2002
-14
V
DDQ
Maximum changed to 3.6V, TFBGA and μBGA package dimensions added to
descriptions.
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PDF描述 |
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| M28W160BB706T | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160BB70GBT | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160BB70-NT | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160BB856T | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160BB85GBT | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M28W160BB100ZB1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160BB100ZB6T | 功能描述:闪存 16M (1Mx16) 100ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M28W160BB706T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160BB70GB1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160BB70GB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
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