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参数资料
| 型号： | M28W160BB1006T |
| 厂商： | 意法半导体 |
| 英文描述： | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| 中文描述： | 16兆位（1兆x16插槽，引导块）3V电源快闪记忆体 |
| 文件页数： | 5/45页 |
| 文件大小： | 343K |
| 代理商： | M28W160BB1006T |
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M28W160BT, M28W160BB
SUMMARY DESCRIPTION
The M28W160B is a 16 Mbit (1 Mbit x 16) non-vol-
atile Flash memory that can be erased electrically
at the block level and programmed in-system on a
Word-by-Word basis. These operations can be
performed using a single low voltage (2.7 to 3.6V)
supply. V
DDQ
allows to drive the I/O pin down to
1.65V. An optional 12V V
PP
power supply is pro-
vided to speed up customer programming.
The device features an asymmetrical blocked ar-
chitecture. The M28W160B has an array of 39
blocks: 8 Parameter Blocks of 4 KWord and 31
Main Blocks of 32 KWord. M28W160BT has the
Parameter Blocks at the top of the memory ad-
dress space while the M28W160BB locates the
Parameter Blocks starting from the bottom. The
memory maps are shown in Figure 6, Block Ad-
dresses.
Parameter blocks 0 and 1 can be protected from
accidental programming or erasure. Each block
can be erased separately. Erase can be suspend-
ed in order to perform either read or program in
any other block and then resumed. Program can
be suspended to read data in any other block and
then resumed. Each block can be programmed
and erased over 100,000 cycles.
Program and Erase commands are written to the
Command Interface of the memory. An on-chip
Program/Erase Controller takes care of the tim-
ings necessary for program and erase operations.
The end of a program or erase operation can be
detected and any error conditions identified. The
command set required to control the memory is
consistent with JEDEC standards.
The memory is offered in TSOP48 (10 X 20mm),
μBGA46 (6.39 x 6.37mm
,
0.75mm pitch) and
TFBGA46 (6.39 x 6.37mm,0.75mm pitch) packag-
es and is supplied with all the bits erased (set to
’1’).
Figure 2. Logic Diagram
Table 1. Signal Names
A0-A19
Address Inputs
DQ0-DQ15
Data Input/Output
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset
WP
Write Protect
V
DD
Core Power Supply
V
DDQ
Power Supply for
Input/Output
V
PP
Optional Supply Voltage for
Fast Program & Erase
V
SS
Ground
AI02628
20
A0-A19
W
DQ0-DQ15
VDD
M28W160BT
M28W160BB
E
VSS
16
G
RP
WP
VDDQVPP
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M28W160BB100GB1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160BB100GB6 | 功能描述:闪存 16M (1Mx16) 100ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M28W160BB100GB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160BB100GBT | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160BB100N1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
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