参数资料
型号: M28W160BB706T
厂商: 意法半导体
英文描述: 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
中文描述: 16兆位(1兆x16插槽,引导块)3V电源快闪记忆体
文件页数: 37/45页
文件大小: 343K
代理商: M28W160BB706T
37/45
M28W160BT, M28W160BB
Table 27. Device Geometry Definition
Offset Word
Mode
Data
Description
Value
27h
0015h
Device Size = 2
n
in number of bytes
2MByte
28h
29h
0001h
0000h
Flash Device Interface Code description
x16
Async
2Ah
2Bh
0002h
0000h
Maximum number of bytes in multi-byte program or page = 2
n
4
2Ch
0002h
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing contiguous
Erase Blocks of the same size.
2
M
2Dh
2Eh
001Eh
0000h
Region 1 Information
Number of identical-size erase block = 001Eh+1
31
2Fh
30h
0000h
0001h
Region 1 Information
Block size in Region 1 = 0100h * 256 byte
64KByte
31h
32h
0007h
0000h
Region 2 Information
Number of identical-size erase block = 0007h+1
8
33h
34h
0020h
0000h
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
8KByte
M
2Dh
2Eh
0007h
0000h
Region 1 Information
Number of identical-size erase block = 0007h+1
8
2Fh
30h
0020h
0000h
Region 1 Information
Block size in Region 1 = 0020h * 256 byte
8KByte
31h
32h
001Eh
0000h
Region 2 Information
Number of identical-size erase block = 001Eh+1
31
33h
34h
0000h
0001h
Region 2 Information
Block size in Region 2 = 0100h * 256 byte
64KByte
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