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参数资料
| 型号： | M28W160BB90GBT |
| 厂商： | 意法半导体 |
| 英文描述： | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| 中文描述： | 16兆位（1兆x16插槽，引导块）3V电源快闪记忆体 |
| 文件页数： | 13/45页 |
| 文件大小： | 343K |
| 代理商： | M28W160BB90GBT |
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13/45
M28W160BT, M28W160BB
commands will be ignored. Typical Program times
are given in Table 6, Program, Erase Times and
Program/Erase Endurance Cycles.
Programming aborts if Reset goes to V
IL
. As data
integrity cannot be guaranteed when the program
operation is aborted, the block containing the
memory location must be erased and repro-
grammed.
See Appendix C, Figure 20, Program Flowchart
and Pseudo Code, for the flowchart for using the
Program command.
Double Word Program Command
This feature is offered to improve the programming
throughput, writing a page of two adjacent words
in parallel.The two words must differ only for the
address A0. Programming should not be attempt-
ed when V
PP
is not at V
PPH
. The command can be
executed if V
PP
is below V
PPH
but the result is not
guaranteed.
Three bus write cycles are necessary to issue the
Double Word Program command.
I
The first bus cycle sets up the Double Word
Program command.
I
The second bus cycle latches the Address and
the Data of the first word to be written.
I
The third bus cycle latches the Address and the
Data of the second word to be written and starts
the Program/Erase Controller.
Read operations output the Status Register con-
tent after the programming has started. Program-
ming aborts if Reset goes to V
IL
. As data integrity
cannot be guaranteed when the program opera-
tion is aborted, the block containing the memory
location must be erased and reprogrammed.
See Appendix C, Figure 21, Double Word Pro-
gram Flowchart and Pseudo Code, for the flow-
chart
for
using
the
Double
command.
Clear Status Register Command
The Clear Status Register command can be used
to reset bits 1, 3, 4 and 5 in the Status Register to
‘0’. One bus write cycle is required to issue the
Clear Status Register command.
The bits in the Status Register do not automatical-
ly return to ‘0’ when a new Program or Erase com-
mand is issued. The error bits in the Status
Register should be cleared before attempting a
new Program or Erase command.
Word
Program
Program/Erase Suspend Command
The Program/Erase Suspend command is used to
pause a Program or Erase operation. One bus
write cycle is required to issue the Program/Erase
command and pause the Program/Erase control-
ler.
During Program/Erase Suspend the Command In-
terface will accept the Program/Erase Resume,
Read Array, Read Status Register, Read Electron-
ic Signature and Read CFI Query commands. Ad-
ditionally, if the suspend operation was Erase then
the Program command will also be accepted. Only
the blocks not being erased may be read or pro-
grammed correctly.
During a Program/Erase Suspend, the device can
be placed in a pseudo-standby mode by taking
Chip Enable to V
IH
. Program/Erase is aborted if
Reset turns to V
IL
.
See Appendix C, Figure 22, Program Suspend &
Resume Flowchart and Pseudo Code, and Figure
24, Erase Suspend & Resume Flowchart and
Pseudo Code for flowcharts for using the Program/
Erase Suspend command.
Program/Erase Resume Command
The Program/Erase Resume command can be
used to restart the Program/Erase Controller after
a Program/Erase Suspend operation has paused
it. One Bus Write cycle is required to issue the
command. Once the command is issued subse-
quent Bus Read operations read the Status Reg-
ister.
See Appendix C, Figure 22, Program or Double
Word Program Suspend & Resume Flowchart and
Pseudo Code, and Figure 24, Erase Suspend &
Resume Flowchart and Pseudo Code for flow-
charts for using the Program/Erase Resume com-
mand.
Block Protection
Two parameter/lockable blocks (blocks #0 and #1)
can be protected against Program or Erase oper-
ations. Unprotected blocks can be programmed or
erased.
To protect the two lockable blocks set Write Pro-
tect to V
IL
. When V
PP
is below V
PPLK
all blocks are
protected. Any attempt to Program or Erase pro-
tected blocks will abort, the data in the block will
not be changed and the Status Register outputs
the error.
Table 5, Memory Blocks Protection Truth Table
,
defines the protection methods.
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相关代理商/技术参数 |
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|---|---|
| M28W160BB90N1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160BB90N6 | 功能描述:闪存 16M (1Mx16) 90ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M28W160BB90N6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160BB90-NT | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160BB90ZB1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
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