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参数资料
型号： M28W160ECB100N1E
厂商： 意法半导体
英文描述： 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
中文描述： 16兆位（1兆x16插槽，引导块）3V电源快闪记忆体
文件页数： 12/50页
文件大小： 860K
代理商： M28W160ECB100N1E
M28W160ECT, M28W160ECB
12/50
Programming aborts if Reset goes to V
IL
. As data
integrity cannot be guaranteed when the program
operation is aborted, the block containing the
memory location must be erased and repro-
grammed.
See
APPENDIX C.
,
Figure 17., Program Flow-
chart and Pseudo Code
, for the flowchart for using
the Program command.
Double Word Program Command
This feature is offered to improve the programming
throughput, writing a page of two adjacent words
in parallel.The two words must differ only for the
address A0. Programming should not be attempt-
ed when V
PP
is not at V
PPH
. The command can be
executed if V
PP
is below V
PPH
but the result is not
guaranteed.
Three bus write cycles are necessary to issue the
Double Word Program command.
The first bus cycle sets up the Double Word
Program Command.
The second bus cycle latches the Address and
the Data of the first word to be written.
The third bus cycle latches the Address and
the Data of the second word to be written and
starts the Program/Erase Controller.
Read operations output the Status Register con-
tent after the programming has started. Program-
ming aborts if Reset goes to V
IL
. As data integrity
cannot be guaranteed when the program opera-
tion is aborted, the block containing the memory
location must be erased and reprogrammed.
See
APPENDIX C.
,
Figure 18., Double Word Pro-
gram Flowchart and Pseudo Code
, for the flow-
chart for using the Double Word Program
command.
Clear Status Register Command
The Clear Status Register command can be used
to reset bits 1, 3, 4 and 5 in the Status Register to
‘0’. One bus write cycle is required to issue the
Clear Status Register command.
The bits in the Status Register do not automatical-
ly return to ‘0’ when a new Program or Erase com-
mand is issued. The error bits in the Status
Register should be cleared before attempting a
new Program or Erase command.
Program/Erase Suspend Command
The Program/Erase Suspend command is used to
pause a Program or Erase operation. One bus
write cycle is required to issue the Program/Erase
command and pause the Program/Erase control-
ler.
During Program/Erase Suspend the Command In-
terface will accept the Program/Erase Resume,
Read Array, Read Status Register, Read Electron-
ic Signature and Read CFI Query commands. Ad-
■
■
■
ditionally, if the suspend operation was Erase then
the Program, Block Lock, Block Lock-Down or
Protection Program commands will also be ac-
cepted. The block being erased may be protected
by issuing the Block Protect, Block Lock or Protec-
tion Program commands. When the Program/
Erase Resume command is issued the operation
will complete. Only the blocks not being erased
may be read or programmed correctly.
During a Program/Erase Suspend, the device can
be placed in a pseudo-standby mode by taking
Chip Enable to V
IH
. Program/Erase is aborted if
Reset turns to V
IL
.
See
APPENDIX C.
,
Figure 19., Program Suspend
& Resume Flowchart and Pseudo Code
, and
Fig-
ure 21., Erase Suspend & Resume Flowchart and
Pseudo Code
, for flowcharts for using the Pro-
gram/Erase Suspend command.
Program/Erase Resume Command
The Program/Erase Resume command can be
used to restart the Program/Erase Controller after
a Program/Erase Suspend operation has paused
it. One Bus Write cycle is required to issue the
command. Once the command is issued subse-
quent Bus Read operations read the Status Reg-
ister.
See
APPENDIX C.
,
Figure 19., Program Suspend
& Resume Flowchart and Pseudo Code
, and
Fig-
ure 21., Erase Suspend & Resume Flowchart and
Pseudo Code
, for flowcharts for using the Pro-
gram/Erase Resume command.
Protection Register Program Command
The Protection Register Program command is
used to Program the 64 bit user One-Time-Pro-
grammable (OTP) segment of the Protection Reg-
ister. The segment is programmed 16 bits at a
time. When shipped all bits in the segment are set
to ‘1’. The user can only program the bits to ‘0’.
Two write cycles are required to issue the Protec-
tion Register Program command.
The first bus cycle sets up the Protection
Register Program command.
The second latches the Address and the Data
to be written to the Protection Register and
starts the Program/Erase Controller.
Read operations output the Status Register con-
tent after the programming has started.
The segment can be protected by programming bit
1 of the Protection Lock Register. Bit 1 of the Pro-
tection Lock Register protects bit 2 of the Protec-
tion Lock Register. Programming bit 2 of the
Protection Lock Register will result in a permanent
protection of the Security Block (see
Figure
6., Security Block and Protection Register Memo-
ry Map
). Attempting to program a previously pro-
tected Protection Register will result in a Status
■
■
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M28W160ECB100N1F 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
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M28W160ECB100N1U 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
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