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参数资料
| 型号： | M28W800CB85N6T |
| 厂商： | 意法半导体 |
| 英文描述： | 8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory |
| 中文描述： | 8兆位512KB的x16插槽，启动块3V电源快闪记忆体 |
| 文件页数： | 9/49页 |
| 文件大小： | 369K |
| 代理商： | M28W800CB85N6T |
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M28W800CT, M28W800CB
SIGNAL DESCRIPTIONS
See Figure 2 Logic Diagram and Table 1,Signal
Names, for a brief overview of the signals connect-
ed to this device.
Address Inputs (A0-A18).
The Address Inputs
select the cells in the memory array to access dur-
ing Bus Read operations. During Bus Write opera-
tions they control the commands sent to the
Command Interface of the internal state machine.
Data Input/Output (DQ0-DQ15).
The Data I/O
outputs the data stored at the selected address
during a Bus Read operation or inputs a command
or the data to be programmed during a Write Bus
operation.
Chip Enable (E).
The Chip Enable input acti-
vates the memory control logic, input buffers, de-
coders and sense amplifiers. When Chip Enable is
at V
IL
and Reset is at V
IH
the device is in active
mode. When Chip Enable is at V
IH
the memory is
deselected, the outputs are high impedance and
the power consumption is reduced to the stand-by
level.
Output Enable (G).
The Output Enable controls
data outputs during the Bus Read operation of the
memory.
Write Enable (W).
The Write Enable controls the
Bus Write operation of the memory’s Command
Interface. The data and address inputs are latched
on the rising edge of Chip Enable, E, or Write En-
able, W, whichever occurs first.
Write Protect (WP).
Write Protect is an input
that gives an additional hardware protection for
each block. When Write Protect is at V
IL
, the Lock-
Down is enabled and the protection status of the
block cannot be changed. When Write Protect is at
V
IH
, the Lock-Down is disabled and the block can
be locked or unlocked. (refer to Table 6, Read Pro-
tection Register and Protection Register Lock).
Reset (RP).
The Reset input provides a hard-
ware reset of the memory. When Reset is at V
IL
,
the memory is in reset mode: the outputs are high
impedance and the current consumption is mini-
mized. After Reset all blocks are in the Locked
state. When Reset is at V
IH
, the device is in normal
operation. Exiting reset mode the device enters
read array mode, but a negative transition of Chip
Enable or a change of the address is required to
ensure valid data outputs.
V
DD
Supply Voltage.
V
DD
provides the power
supply to the internal core of the memory device.
It is the main power supply for all operations
(Read, Program and Erase).
V
DDQ
Supply Voltage.
V
DDQ
power supply to the I/O pins and enables all Out-
puts to be powered independently from V
DD
. V
DDQ
can be tied to V
DD
or can use a separate supply.
V
PP
Program Supply Voltage.
V
PP
is both a
control input and a power supply pin. The two
functions are selected by the voltage range ap-
plied to the pin. The Supply Voltage V
DD
and the
Program Supply Voltage V
PP
can be applied in
any order.
If V
PP
is kept in a low voltage range (0V to 3.6V)
V
PP
is seen as a control input. In this case a volt-
age lower than V
PPLK
gives an absolute protection
against program or erase, while V
PP
> V
PP1
en-
ables these functions (see Table 14, DC Charac-
teristics for the relevant values). V
PP
is only
sampled at the beginning of a program or erase; a
change in its value after the operation has started
does not have any effect and program or erase op-
erations continue.
If V
PP
is in the range 11.4V to 12.6V it acts as a
power supply pin. In this condition V
PP
must be
stable until the Program/Erase algorithm is com-
pleted (see Table 16 and 17).
V
SS
Ground.
V
SS
is the reference for all voltage
measurements.
Note: Each device in a system should have
V
DD
, V
DDQ
and V
PP
decoupled with a 0.1μF ca-
pacitor close to the pin. See Figure 8, AC Mea-
surement Load Circuit. The PCB trace widths
should be sufficient to carry the required V
PP
program and erase currents.
provides
the
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相关代理商/技术参数 |
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| M28W800CB90N1 | 功能描述:闪存 8M (512Kx16) 90ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M28W800CB90N6 | 功能描述:闪存 8M (512Kx16) 90ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M28W800CB90N6T | 功能描述:闪存 8M (512Kx16) 90ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M28W800CT70N6 | 功能描述:闪存 8M (512Kx16) 70ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M28W800CT70ZB6T | 功能描述:闪存 8M (512Kx16) 70ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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