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参数资料
| 型号： | M29DW128F60NF6E |
| 厂商： | 意法半导体 |
| 英文描述： | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| 中文描述： | 128兆位（16Mb的x8或和8Mb x16插槽，多行，页，引导块）3V电源，快闪记忆体 |
| 文件页数： | 17/93页 |
| 文件大小： | 719K |
| 代理商： | M29DW128F60NF6E |
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M29DW128F
3 Bus operations
17/93
3
Bus operations
There are five standard bus operations that control the device. These are Bus Read (Random
and Page modes), Bus Write, Output Disable, Standby and Automatic Standby.
Dual operations are possible in the M29DW128F, thanks to its multiple bank architecture. While
programming or erasing in one banks, read operations are possible in any of the other banks.
Write operations are only allowed in one bank at a time.
See
Table 3
and
Table 6
, Bus Operations, for a summary. Typically glitches of less than 5ns on
Chip Enable, Write Enable, and Reset/Block Temporary Unprotect pins are ignored by the
memory and do not affect bus operations.
3.1
Bus Read
Bus Read operations read from the memory cells, or specific registers in the Command
Interface. To speed up the read operation the memory array can be read in Page mode where
data is internally read and stored in a page buffer. The Page has a size of 8 Words and is
addressed by the address inputs A0-A2.
A valid Bus Read operation involves setting the desired address on the Address Inputs,
applying a Low signal, V
IL
, to Chip Enable and Output Enable and keeping Write Enable High,
V
IH
. The Data Inputs/Outputs will output the value, see
Figure 12: Random Read AC
Waveforms
,
Figure 13: Page Read AC Waveforms
, and
Table 26: Read AC Characteristics
, for
details of when the output becomes valid.
3.2
Bus Write
Bus Write operations write to the Command Interface. A valid Bus Write operation begins by
setting the desired address on the Address Inputs. The Address Inputs are latched by the
Command Interface on the falling edge of Chip Enable or Write Enable, whichever occurs last.
The Data Inputs/Outputs are latched by the Command Interface on the rising edge of Chip
Enable or Write Enable, whichever occurs first. Output Enable must remain High, V
IH
, during
the whole Bus Write operation. See
Figure 14
and
Figure 15
, Write AC Waveforms, and
Table 27
and
Table 28
, Write AC Characteristics, for details of the timing requirements.
3.3
Output Disable
The Data Inputs/Outputs are in the high impedance state when Output Enable is High, V
IH
.
3.4
Standby
When Chip Enable is High, V
IH
, the memory enters Standby mode and the Data Inputs/Outputs
pins are placed in the high-impedance state. To reduce the Supply Current to the Standby
Supply Current, I
CC2
, Chip Enable should be held within V
CC
± 0.2V. For the Standby current
level see
Table 25: DC Characteristics
. During program or erase operations the memory will
continue to use the Program/Erase Supply Current, I
CC3
, for Program or Erase operations until
the operation completes.
相关PDF资料 |
PDF描述 |
|---|---|
| M29DW128F60NF6F | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60NF6T | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60ZA1 | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60ZA1E | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60ZA1F | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M29DW128F60NF6F | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
| M29DW128F60NF6T | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
| M29DW128F60ZA1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
| M29DW128F60ZA1E | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
| M29DW128F60ZA1F | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
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