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参数资料
| 型号： | M29DW128F60ZA1 |
| 厂商： | 意法半导体 |
| 英文描述： | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| 中文描述： | 128兆位（16Mb的x8或和8Mb x16插槽，多行，页，引导块）3V电源，快闪记忆体 |
| 文件页数： | 8/93页 |
| 文件大小： | 719K |
| 代理商： | M29DW128F60ZA1 |
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1 Summary description
M29DW128F
8/93
1
Summary description
The M29DW128F is a 128 Mbit (16Mb x8 or 8Mb x16) non-volatile memory that can be read,
erased and reprogrammed. These operations can be performed using a single low voltage (2.7
to 3.6V) supply. V
CCQ
is an additional voltage supply that allows to drive the I/O pins down to
1.65V. At Power-up the memory defaults to its Read mode.
The M29DW128F features an asymmetrical block architecture, with 16 parameter and 254
main blocks, divided into four Banks, A, B, C and D, providing multiple Bank operations. While
programming or erasing in one bank, read operations are possible in any other bank. The bank
architecture is summarized in
Table 2
. Eight of the Parameter Blocks are at the top of the
memory address space, and eight are at the bottom.
Program and Erase commands are written to the Command Interface of the memory. An on-
chip Program/Erase Controller simplifies the process of programming or erasing the memory by
taking care of all of the special operations that are required to update the memory contents.
The end of a program or erase operation can be detected and any error conditions identified.
The command set required to control the memory is consistent with JEDEC standards. The
Chip Enable, Output Enable and Write Enable signals control the bus operations of the
memory. They allow simple connection to most microprocessors, often without additional logic.
The device supports Asynchronous Random Read and Page Read from all blocks of the
memory array.
The M29DW128F has one extra 256 Byte block (Extended Block) that can be accessed using a
dedicated command. The Extended Block can be protected and so is useful for storing security
information. However the protection is irreversible, once protected the protection cannot be
undone.
Each block can be erased independently, so it is possible to preserve valid data while old data
is erased.
The device features four different levels of hardware and software block protection to avoid
unwanted program or erase (modify). The software block protection features are available in 16
bit memory organization only:
Hardware Protection:
–
The V
PP
/WP provides a hardware protection of the four outermost parameter blocks
(two at the top and two at the bottom of the address space).
–
The RP pin temporarily unprotects all the blocks previously protected using a High
Voltage Block Protection technique (see
Appendix D: High Voltage Block Protection
).
Software Protection
–
Standard Protection
–
Password Protection
●
●
The memory is offered in TSOP56 (14 x 20mm) and TBGA64 (10 x 13mm, 1mm pitch)
packages. The 8-bit Bus mode is only available when the M29DW128F is delivered in TSOP56
package. In order to meet environmental requirements, ST offers the M29DW128F in
ECOPACK
packages. ECOPACK packages are Lead-free. The category of second Level
Interconnect is marked on the package and on the inner box label, in compliance with JEDEC
Standard JESD97. The maximum ratings related to soldering conditions are also marked on
the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at:
www.st.com. The memory is supplied with all the bits erased (set to ’1’).
相关PDF资料 |
PDF描述 |
|---|---|
| M29DW128F60ZA1E | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60ZA1F | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60ZA1T | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60ZA6 | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60ZA6E | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M29DW128F60ZA1E | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
| M29DW128F60ZA1F | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
| M29DW128F60ZA1T | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
| M29DW128F60ZA6 | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
| M29DW128F60ZA6E | 功能描述:闪存 STD FLASH 128 MEG RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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