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参数资料
| 型号： | M29DW128F60ZA6F |
| 厂商： | 意法半导体 |
| 英文描述： | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| 中文描述： | 128兆位（16Mb的x8或和8Mb x16插槽，多行，页，引导块）3V电源，快闪记忆体 |
| 文件页数： | 18/93页 |
| 文件大小： | 719K |
| 代理商： | M29DW128F60ZA6F |
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3 Bus operations
M29DW128F
18/93
3.5
Automatic Standby
If CMOS levels (V
CC
± 0.2V) are used to drive the bus and the bus is inactive for 300ns or more
the memory enters Automatic Standby where the internal Supply Current is reduced to the
Standby Supply Current, I
CC2
. The Data Inputs/Outputs will still output data if a Bus Read
operation is in progress.
3.6
Special Bus Operations
Additional bus operations can be performed to read the Electronic Signature, verify the
Protection Status of the Extended Memory Block (second section), and apply and remove
Block Protection. These bus operations are intended for use by programming equipment and
are not usually used in applications. They require V
ID
to be applied to some pins.
3.6.1
Read Electronic Signature
The memory has two codes, the Manufacturer code and the Device code used to identify the
memory. These codes can accessed by performing read operations with control signals and
addresses set as shown in
Table 4
and
Table 6
.
These codes can also be accessed by issuing an Auto Select command (see
Auto Select
command
in
Section 6: Command Interface
).
3.6.2
Verify Extended Block Protection Indicator
The Extended Block is divided in two sections of which one is Factory Locked and the second
one is either Customer Lockable or Customer Locked.
The Protection Status of the second section of the Extended Block (Customer Lockable or
Customer Locked) can be accessed by reading the Extended Block Protection Indicator. This is
performed by applying the signals as shown in
Table 5
and
Table 8
. The Protection Status of
the Extended Block is then output on bits DQ7 and DQ6 of the Data Input/Outputs. (see
Table 3
and
Table 6
, Bus Operations).
The Protection Status of the Extended Block can also be accessed by issuing an Auto Select
command (see
Auto Select command
in
Section 6: Command Interface
).
3.6.3
Verify Block Protection Status
The Protection Status of a Block can be directly accessed by performing a read operation with
control signals and addresses set as shown in
Table 5
and
Table 8
.
If the Block is protected, then 01h (in x8 mode) is output on Data Input/Outputs DQ0-DQ7,
otherwise 00h is output.
3.6.4
Hardware Block Protect
The V
PP
/WP pin can be used to protect the four outermost parameter blocks. When V
PP
/WP is
at V
IL
the four outermost parameter blocks are protected and remain protected regardless of
the Block Protection Status or the Reset/Block Temporary Unprotect pin state.
相关PDF资料 |
PDF描述 |
|---|---|
| M29DW128F60ZA6T | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F70NF1 | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F70NF1E | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F70NF1F | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M29DW128F60ZA6T | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
| M29DW128F70NF1 | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
| M29DW128F70NF1E | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F70NF1F | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F70NF1T | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
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