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参数资料
| 型号： | M29DW323DT90ZA6 |
| 厂商： | 意法半导体 |
| 英文描述： | 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory |
| 中文描述： | 32兆位4Mb的x8或功能的2Mb x16插槽，双行8时24分，启动块3V电源快闪记忆体 |
| 文件页数： | 12/49页 |
| 文件大小： | 818K |
| 代理商： | M29DW323DT90ZA6 |
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M29DW323DT, M29DW323DB
12/49
Ready/Busy is Low, V
OL
. Ready/Busy is high-im-
pedance during Read mode, Auto Select mode
and Erase Suspend mode.
After a Hardware Reset, Bus Read and Bus Write
operations cannot begin until Ready/Busy be-
comes high-impedance. See Table 16 and Figure
15, Reset/Temporary Unprotect AC Characteris-
tics.
The use of an open-drain output allows the Ready/
Busy pins from several memories to be connected
to a single pull-up resistor. A Low will then indicate
that one, or more, of the memories is busy.
Byte/Word Organization Select (BYTE).
The
Byte/Word Organization Select pin is used to
switch between the x8 and x16 Bus modes of the
memory. When Byte/Word Organization Select is
Low, V
IL
, the memory is in x8 mode, when it is
High, V
IH
, the memory is in x16 mode.
V
CC
Supply Voltage (2.7V to 3.6V).
V
CC
vides the power supply for all operations (Read,
Program and Erase).
The Command Interface is disabled when the V
CC
Supply Voltage is less than the Lockout Voltage,
V
LKO
. This prevents Bus Write operations from ac-
cidentally damaging the data during power up,
power down and power surges. If the Program/
Erase Controller is programming or erasing during
this time then the operation aborts and the memo-
ry contents being altered will be invalid.
A 0.1μF capacitor should be connected between
the V
CC
Supply Voltage pin and the V
SS
Ground
pin to decouple the current surges from the power
supply. The PCB track widths must be sufficient to
carry the currents required during Program and
Erase operations, I
CC3
.
V
SS
Ground.
V
SS
is the reference for all voltage
measurements. The device features two V
SS
pins
which must be both connected to the system
ground.
pro-
相关PDF资料 |
PDF描述 |
|---|---|
| M29DW323DT90ZA6F | 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory |
| M29DW323DT90ZA6T | 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory |
| M29DW323DT90ZE1 | 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory |
| M29DW323DT90ZE1T | Low-Noise, High-Speed, Precision Single Operational Amplifier 8-SOIC -55 to 125 |
| M29DW323DT90ZE6 | 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M29DW323DT90ZA6E | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory |
| M29DW323DT90ZA6F | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory |
| M29DW323DT90ZA6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory |
| M29DW323DT90ZE1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory |
| M29DW323DT90ZE1E | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory |
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