- 您现在的位置：买卖IC网 > PDF目录359022 > M29DW324DB70ZE6E (意法半导体) 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory PDF资料下载
参数资料
| 型号： | M29DW324DB70ZE6E |
| 厂商： | 意法半导体 |
| 英文描述： | 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory |
| 中文描述： | 32兆位4Mb的x8或功能的2Mb x16插槽，双行16点16分，启动块3V电源快闪记忆体 |
| 文件页数： | 1/49页 |
| 文件大小： | 815K |
| 代理商： | M29DW324DB70ZE6E |
当前第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页
1/49
June 2003
M29DW324DT
M29DW324DB
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
I
SUPPLY VOLTAGE
– V
CC
=
2.7V to 3.6V for Program, Erase and
Read
– V
PP
=12V for Fast Program (optional)
I
ACCESS TIME: 70, 90ns
I
PROGRAMMING TIME
– 10μs per Byte/Word typical
– Double Word/ Quadruple Byte Program
I
MEMORY BLOCKS
– Dual Bank Memory Array: 16Mbit+16Mbit
– Parameter Blocks (Top or Bottom Location)
I
DUAL OPERATIONS
– Read in one bank while Program or Erase in
other
I
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
I
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
I
V
PP
/WP PIN for FAST PROGRAM and WRITE
PROTECT
I
TEMPORARY BLOCK UNPROTECTION
MODE
I
COMMON FLASH INTERFACE
– 64 bit Security Code
I
EXTENDED MEMORY BLOCK
– Extra block used as security block or to store
additional information
I
LOW POWER CONSUMPTION
– Standby and Automatic Standby
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29DW324DT: 225Ch
– Bottom Device Code M29DW324DB: 225Dh
Figure 1. Packages
TSOP48 (N)
12 x 20mm
FBGA
TFBGA63 (ZA)
7 x 11mm
FBGA
TFBGA48 (ZE)
6 x 8mm
相关PDF资料 |
PDF描述 |
|---|---|
| M29DW324DT90ZE6E | 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory |
| M29DW324DB90ZE6E | 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory |
| M29DW324DT70ZE1E | 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory |
| M29DW324DB70ZE1E | 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory |
| M29DW324DT90ZE1E | 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M29DW324DB70ZE6F | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory |
| M29DW324DB70ZE6T | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory |
| M29DW324DB90N1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory |
| M29DW324DB90N1E | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory |
| M29DW324DB90N1F | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory |
发布紧急采购，3分钟左右您将得到回复。