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参数资料
| 型号： | M29DW640D70N6F |
| 厂商： | 意法半导体 |
| 英文描述： | 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| 中文描述： | 64兆位（8兆x8或4Mb的x16插槽，多行，页，引导块）3V电源快闪记忆体 |
| 文件页数： | 1/56页 |
| 文件大小： | 942K |
| 代理商： | M29DW640D70N6F |
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1/56
December 2004
M29DW640D
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
SUPPLY VOLTAGE
–
V
CC
=
2.7V to 3.6V for Program, Erase
and Read
–
V
PP
=12V for Fast Program (optional)
ASYNCHRONOUS PAGE READ MODE
–
Page Width 4 Words
–
Page Access 25, 30ns
–
Random Access 70, 90ns
PROGRAMMING TIME
–
10μs per Byte/Word typical
–
4 Words / 8 Bytes at-a-time Program
MEMORY BLOCKS
–
Quadruple Bank Memory Array:
8Mbit+24Mbit+24Mbit+8Mbit
–
Parameter Blocks (at both Top and
Bottom)
DUAL OPERATIONS
–
While Program or Erase in a group of
banks (from 1 to 3), Read in any of the
other banks
PROGRAM/ ERASE SUSPEND and
RESUME MODES
–
Read from any Block during Program
Suspend
–
Read and Program another Block during
Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
–
Faster Production/Batch Programming
V
PP
/WP PIN for FAST PROGRAM and
WRITE PROTECT
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
–
64 bit Security Code
EXTENDED MEMORY BLOCK
–
Extra block used as security block or to
store additional information
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■
■
■
■
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Figure 1. Packages
■
LOW POWER CONSUMPTION
–
Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
–
Manufacturer Code: 0020h
–
Device Code: 227Eh + 2202h + 2201h
■
■
TSOP48 (N)
12 x 20mm
FBGA
TFBGA63 (ZA)
7 x 11mm
相关PDF资料 |
PDF描述 |
|---|---|
| M29DW640D70N6E | 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70N6 | 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70N1T | 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70N1F | 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70N1E | 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M29DW640D70N6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70ZA1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70ZA1E | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70ZA1F | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70ZA1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
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