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参数资料
型号： M29DW640D90N6
厂商： 意法半导体
英文描述： 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
中文描述： 64兆位（8兆x8或4Mb的x16插槽，多行，页，引导块）3V电源快闪记忆体
文件页数： 15/56页
文件大小： 942K
代理商： M29DW640D90N6
15/56
M29DW640D
COMMAND INTERFACE
All Bus Write operations to the memory are inter-
preted by the Command Interface. Commands
consist of one or more sequential Bus Write oper-
ations. Failure to observe a valid sequence of Bus
Write operations will result in the memory return-
ing to Read mode. The long command sequences
are imposed to maximize data security.
The address used for the commands changes de-
pending on whether the memory is in 16-bit or 8-
bit mode. See either Table
5
, or
6
, depending on
the configuration that is being used, for a summary
of the commands.
Read/Reset Command
The Read/Reset command returns the memory to
its Read mode. It also resets the errors in the Sta-
tus Register. Either one or three Bus Write opera-
tions can be used to issue the Read/Reset
command.
The Read/Reset command can be issued, be-
tween Bus Write cycles before the start of a pro-
gram or erase operation, to return the device to
read mode. If the Read/Reset command is issued
during the timeout of a Block erase operation then
the memory will take up to 10μs to abort. During
the abort period no valid data can be read from the
memory. The Read/Reset command will not abort
an Erase operation when issued while in Erase
Suspend.
Auto Select Command
The Auto Select command is used to read the
Manufacturer Code and Device Code, the Block
Protection Status and the Extended Block Indica-
tor. It can be addressed to either Bank. Three con-
secutive Bus Write operations are required to
issue the Auto Select command. The final Write
cycle must be addressed to one of the Banks.
Once the Auto Select command is issued Bus
Read operations to the Bank where the command
was issued output the Auto Select data. Bus Read
operations to the other Bank will output the con-
tents of the memory array. The memory remains in
Auto Select mode until a Read/Reset or CFI Query
command is issued. This command must be is-
sued addressing the same Bank, as was given
when entering Auto Select Mode.
In Auto Select mode the Manufacturer Code can
be read using a read operation, A6 and A3 to A0
each held at V
IL
, and A21-A19 set to the Bank Ad-
dress. The other address bits may be set to either
V
IL
or V
IH
.
The Device Codes can be read using a read oper-
ation, A6 held at V
IL
, A3 to A0 each held at the lev-
els given in Tables
3
and
4
, and A21-A19 set to the
Bank Address. The other address bits may be set
to either V
IL
or V
IH
.
The Block Protection Status of each block can be
read using a read operation, A6 A3 A2 A0 each
held at V
IL
, A1 held at V
IH
, and A21-A19 set to the
Bank Address, and A18-A12 specifying the ad-
dress of the block inside the Bank. The other ad-
dress bits may be set to either V
IL
or V
IH
. If the
addressed block is protected then 01h is output on
Data Inputs/Outputs DQ0-DQ7, otherwise 00h is
output.
The Extended Block Status of the Extended Block
can be read using a read operation, A6, A3 and
A2, at V
IL
, A0 and A1, at V
IH
, and A21-A19 set to
Bank Address A. The other bits may be set to ei-
ther V
IL
or V
IH
(Don't Care). If the Extended Block
is "Factory Locked" then 80h is output on Data In-
put/Outputs DQ0-DQ7, otherwise 00h is output.
Read CFI Query Command
The Read CFI Query Command is used to put the
addressed bank in Read CFI Query mode. Once in
Read CFI Query mode Bus Read operations to the
same bank will output data from the Common
Flash Interface (CFI) Memory Area. If the read op-
erations are to a different bank from the one spec-
ified in the command then the read operations will
output the contents of the memory array and not
the CFI data.
One Bus Write cycle is required to issue the Read
CFI Query Command. Care must be taken to issue
the command to one of the banks (A21-A19) along
with the address shown in Tables
3
and
4
(A-1,
A0-A10). Once the command is issued subse-
quent Bus Read operations in the same bank
(A21-A19) to the addresses shown in Appendix
B
(A7-A0), will read from the Common Flash Inter-
face Memory Area.
This command is valid only when the device is in
the Read Array or Autoselected mode. To enter
Read CFI query mode from Auto Select mode, the
Read CFI Query command must be issued to the
same bank address as the Auto Select command,
otherwise the device will not enter Read CFI Que-
ry mode.
The Read/Reset command must be issued to re-
turn the device to the previous mode (the Read Ar-
ray mode or Autoselected mode). A second Read/
Reset command would be needed if the device is
to be put in the Read Array mode from Autoselect-
ed mode.
See Appendix
B
, Tables
24
,
25
,
26
,
27
,
28
and
29
for details on the information contained in the
Common Flash Interface (CFI) memory area.
相关PDF资料
PDF描述
M29DW640D90N1E CONNECT-CRIMP STRT PLUG L/C
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M29DW640D70ZA6T 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
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M29DW640D90N6E 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW640D90N6F 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW640D90N6T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW640D90ZA1 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW640D90ZA1E 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
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