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参数资料
| 型号： | M29DW640D |
| 厂商： | 意法半导体 |
| 英文描述： | 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| 中文描述： | 64兆位（8兆x8或4Mb的x16插槽，多行，页，引导块）3V电源快闪记忆体 |
| 文件页数： | 12/56页 |
| 文件大小： | 942K |
| 代理商： | M29DW640D |
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M29DW640D
12/56
Ready/Busy Output (RB).
The Ready/Busy pin
is an open-drain output that can be used to identify
when the device is performing a Program or Erase
operation. During Program or Erase operations
Ready/Busy is Low, V
OL
. Ready/Busy is high-im-
pedance during Read mode, Auto Select mode
and Erase Suspend mode.
After a Hardware Reset, Bus Read and Bus Write
operations cannot begin until Ready/Busy be-
comes high-impedance. See Table
19
and
Figure
17., Reset/Block Temporary Unprotect AC Wave-
forms
.
The use of an open-drain output allows the Ready/
Busy pins from several memories to be connected
to a single pull-up resistor. A Low will then indicate
that one, or more, of the memories is busy.
Byte/Word Organization Select (BYTE).
The
Byte/Word Organization Select pin is used to
switch between the x8 and x16 Bus modes of the
memory. When Byte/Word Organization Select is
Low, V
IL
, the memory is in x8 mode, when it is
High, V
IH
, the memory is in x16 mode.
V
CC
Supply Voltage (2.7V to 3.6V).
V
CC
vides the power supply for all operations (Read,
Program and Erase).
The Command Interface is disabled when the V
CC
Supply Voltage is less than the Lockout Voltage,
V
LKO
. This prevents Bus Write operations from ac-
cidentally damaging the data during power up,
power down and power surges. If the Program/
Erase Controller is programming or erasing during
this time then the operation aborts and the memo-
ry contents being altered will be invalid.
A 0.1μF capacitor should be connected between
the V
CC
Supply Voltage pin and the V
SS
Ground
pin to decouple the current surges from the power
supply. The PCB track widths must be sufficient to
carry the currents required during Program and
Erase operations, I
CC3
.
V
SS
Ground.
V
SS
is the reference for all voltage
measurements. The device features two V
SS
pins
both of which must be connected to the system
ground.
pro-
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| M29DW640D90N1F | 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D90N1T | 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M29DW640D70N1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70N1E | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70N1F | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70N1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70N6 | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 8MX8/4MX16 70NS 48TSOP - Trays |
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