- 您现在的位置：买卖IC网 > PDF目录359024 > M29F016B70M1T (意法半导体) 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory PDF资料下载
参数资料
| 型号： | M29F016B70M1T |
| 厂商： | 意法半导体 |
| 英文描述： | 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory |
| 中文描述： | 16兆位的2Mb × 8，统一座单电源闪存 |
| 文件页数： | 14/22页 |
| 文件大小： | 135K |
| 代理商： | M29F016B70M1T |
M29F016B
14/22
Figure 8. Read Mode AC Waveforms
AI02966
tAVAV
tAVQV
tAXQX
tELQX
tEHQZ
tGLQV
tGLQX
tGHQX
VALID
A0-A20
G
DQ0-DQ7
E
tELQV
tEHQX
tGHQZ
VALID
Table 11. ReadAC Characteristics
(TA = 0 to 70
°
C, –40 to 85
°
C or –40 to 125
°
C)
Note: 1. Sampled only, not 100% tested.
Symbol
Alt
Parameter
Test Condition
M29F016B
Unit
55
70
90
t
AVAV
t
RC
Address Validto Next Address Valid
E = V
IL
,
G = V
IL
Min
55
70
90
ns
t
AVQV
t
ACC
Address Valid to Output Valid
E = V
IL
,
G = V
IL
Max
55
70
90
ns
t
ELQX(1)
t
LZ
Chip Enable Low to Output
Transition
G = V
IL
Min
0
0
0
ns
t
ELQV
t
CE
Chip Enable Low to Output Valid
G = V
IL
Max
55
70
90
ns
t
GLQX(1)
t
OLZ
Output Enable Low to Output
Transition
E = V
IL
Min
0
0
0
ns
t
GLQV
t
OE
Output Enable Low to Output Valid
E = V
IL
Max
30
30
35
ns
t
EHQZ(1)
t
HZ
Chip Enable High to Output Hi-Z
G = V
IL
Max
18
20
20
ns
t
GHQZ(1)
t
DF
Output Enable High to Output Hi-Z
E = V
IL
Max
18
20
20
ns
t
EHQX
t
GHQX
t
AXQX
t
OH
Chip Enable, Output Enable or
Address Transition to Output
Transition
Min
0
0
0
ns
相关PDF资料 |
PDF描述 |
|---|---|
| M29F016B70M3T | 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory |
| M29F016B70M6T | 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory |
| M29F016B70N1T | 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory |
| M29F016B70N3T | 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory |
| M29F016B70N6T | 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M29F016B70M3T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory |
| M29F016B70M6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory |
| M29F016B70N1 | 功能描述:闪存 1M (128Kx8) 120ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M29F016B70N1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory |
| M29F016B70N3T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory |
发布紧急采购，3分钟左右您将得到回复。