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参数资料
型号： M29F016B70M3T
厂商： 意法半导体
英文描述： 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory
中文描述： 16兆位的2Mb × 8，统一座单电源闪存
文件页数： 6/22页
文件大小： 135K
代理商： M29F016B70M3T
M29F016B
6/22
Automatic Standby.
If CMOS levels (V
CC
±
0.2V)
are usedto drive the busand the busis inactive for
150ns or more the memory enters Automatic
Standby where the internal Supply Current is re-
duced to the Standby Supply Current, I
CC3
. The
Data Inputs/Outputs will still output data if a Bus
Read operation is in progress.
Special Bus Operations
Additional bus operations can be performed to
read the Electronic Signature and also to apply
and remove Block Protection. These bus opera-
tions are intended for use by programming equip-
ment and are not usually used in applications.
They require V
ID
to be applied to some pins.
Electronic Signature.
The
codes, the manufacturer code and the device
code, that can be read to identify the memory.
These codes can be read by applying the signals
listed in Table 4, Bus Operations.
Block Protection
and
Blocks Unprotection.
Blocks
can beprotected in groups against accidental Pro-
gram or Erase. See Table 3, Block Addresses, for
details ofwhich blocks must be protected together
as a group. Protected blocks can be unprotected
to allow data to be changed.
There are two methods available for protecting
and unprotecting the blocks, one for use on pro-
gramming equipment and the other for in-system
use. For further information refer to Application
Note AN1122, Applying Protection and Unprotec-
tion to M29 Series Flash.
memory
has
two
COMMAND INTERFACE
All Bus Write operations to the memory are inter-
preted by the Command Interface. Commands
consist of one or more sequential Bus Write oper-
ations. Failure to observe a valid sequence of Bus
Write operations will result in the memory return-
ing to Read mode. The longcommand sequences
are imposed to maximize data security.
The commands are summarized in Table 5, Com-
mands. Refer to Table 5 in conjunction with the
text descriptions below.
Read/Reset Command.
The Read/Reset com-
mand returns the memory to its Read modewhere
it behaves like a ROM or EPROM. It also resets
the errors in the Status Register. Either one or
three Bus Write operations can be used to issue
the Read/Reset command.
If the Read/Reset command is issued during a
Block Eraseoperation or following a Programming
or Eraseerror then the memory will takeupto 10
μ
s
to abort. During the abort period no valid data can
be read from the memory. Issuing a Read/Reset
command during a Block Erase operation will
leave invalid data in the memory.
Auto Select Command.
The Auto Select com-
mand is used to read the Manufacturer Code, the
Device Code and the Block Protection Status.
Three consecutive Bus Write operations are re-
quired to issue the Auto Select command. Once
the Auto Select command is issued the memory
remains in Auto Select mode until another com-
mand is issued.
From the Auto Select mode the Manufacturer
Code can be read using a Bus Read operation
with A0 = V
IL
and A1 = V
IL
. The other address bits
may be set to either V
IL
or V
IH
. The Manufacturer
Code for STMicroelectronics is 20h.
The Device Code can be read using a Bus Read
operation with A0 = V
IH
and A1 = V
IL
. The other
address bits may be set to either V
IL
or V
IH
. The
Device Code for the M29F016B is ADh.
The Block Protection Status of each block can be
read using a Bus Read operation with A0 = V
IL
,
A1 = V
IH
, and A16-A20 specifying the address of
the block. The other address bits may be set to ei-
ther V
IL
or V
IH
. If the addressed block is protected
then 01h is outputon the DataInputs/Outputs, oth-
erwise 00h is output.
Program Command.
The
can be used to program a value to one address in
the memory array at a time. The command re-
quires fourBus Writeoperations, the finalwrite op-
eration latches theaddress and data in the internal
state machine and starts the Program/Erase Con-
troller.
If the address falls in a protected block then the
Program command is ignored, the data remains
unchanged. The Status Register is never read and
no error condition is given.
During the program operation the memory will ig-
nore all commands. It is not possible to issue any
command to abort or pause the operation. Typical
program times are given in Table 6. BusRead op-
erations during the program operation will output
the Status Register on the Data Inputs/Outputs.
See the section on the Status Register for more
details.
After the program operation has completed the
memory will return to the Read mode, unless an
error has occurred. When an error occurs the
memory will continue to output the Status Regis-
ter. A Read/Reset command must be issued to re-
set the error condition and return to Read mode.
Note that the Programcommand cannot change a
bit set at ’0’ back to ’1. One of the Erase Com-
mands must be used to set all the bits in a block or
in the whole memory from ’0’ to ’1’.
Program
command
相关PDF资料
PDF描述
M29F016B70M6T 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory
M29F016B70N1T 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory
M29F016B70N3T 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory
M29F016B70N6T 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory
M29F016D 16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory
相关代理商/技术参数
参数描述
M29F016B70M6T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory
M29F016B70N1 功能描述:闪存 1M (128Kx8) 120ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
M29F016B70N1T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory
M29F016B70N3T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory
M29F016B70N6T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory
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