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参数资料
| 型号： | M29F016B70N6T |
| 厂商： | 意法半导体 |
| 英文描述： | 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory |
| 中文描述： | 16兆位的2Mb × 8，统一座单电源闪存 |
| 文件页数： | 3/22页 |
| 文件大小： | 135K |
| 代理商： | M29F016B70N6T |
3/22
M29F016B
SUMMARY DESCRIPTION
The M29F016B is a 16 Mbit (2Mb x8) non-volatile
memory that can be read, erased and repro-
grammed. These operations can be performed us-
ing a single 5V supply. On power-up the memory
defaults to its Read mode where it can be read in
the same way as a ROM or EPROM.
The memory is divided into blocks that can be
erased independently so it is possible to preserve
valid data while old data is erased. Blocks can be
protected in groups to prevent accidental Program
or Erase commands from modifying the memory.
Program and Erase commands are written to the
Command Interface of the memory. An on-chip
Program/Erase Controllersimplifies the process of
programming or erasing the memory by taking
care of all of the special operations that are re-
quired to update the memory contents. The end of
a program or eraseoperation can bedetected and
any error conditions identified. The command set
required to control the memory is consistent with
JEDEC standards.
Chip Enable, Output Enableand Write Enable sig-
nals control the bus operation of the memory.
They allow simple connection to most micropro-
cessors, often without additional logic.
The memory is offered in a TSOP40 (10 x 20mm)
and SO44 packages and it is supplied with all the
bits erased (set to ’1’).
Table 2. Absolute Maximum Ratings
(1)
Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions forextended periods may affect device reliability. Referalso to theSTMicroelectronics SURE Program and other relevantqual-
ity documents.
2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns during transitions.
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature (Temperature Range Option 1)
0 to 70
°
C
Ambient Operating Temperature (Temperature Range Option 6)
–40 to 85
°
C
Ambient Operating Temperature (Temperature Range Option 3)
–40 to 125
°
C
T
BIAS
Temperature Under Bias
–50 to 125
°
C
T
STG
Storage Temperature
–65 to 150
°
C
V
IO(2)
Input or Output Voltage
–0.6 to 6
V
V
CC
Supply Voltage
–0.6 to 6
V
V
ID
Identification Voltage
–0.6 to 13.5
V
相关PDF资料 |
PDF描述 |
|---|---|
| M29F016D | 16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory |
| M29F016D55M1T | 16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory |
| M29F016D55M6T | 16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory |
| M29F016D55N1T | 16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory |
| M29F016D55N6T | 16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M29F016B90M1 | 功能描述:闪存 16M (2Mx8) 90ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M29F016B90M1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory |
| M29F016B90M3T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory |
| M29F016B90M6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory |
| M29F016B90N1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory |
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