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参数资料
| 型号： | M29F016B90N1T |
| 厂商： | 意法半导体 |
| 英文描述： | 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory |
| 中文描述： | 16兆位的2Mb × 8，统一座单电源闪存 |
| 文件页数： | 13/22页 |
| 文件大小： | 135K |
| 代理商： | M29F016B90N1T |
13/22
M29F016B
Table 10. DC Characteristics
(T
A
= 0 to 70
°
C, –40 to 85
°
C or –40 to 125
°
C)
Symbol
Note: 1. Sampled only, not 100% tested.
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
±
1
μ
A
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
±
1
μ
A
I
CC1
Supply Current (Read)
E = V
IL
, G = V
IH
, f = 6MHz
20
mA
I
CC2
Supply Current (Standby) TTL
E = V
IH
2
mA
I
CC3
Supply Current (Standby) CMOS
E = V
CC
±
0.2V,
RP = V
CC
±
0.2V
800
μ
A
I
CC4(1)
Supply Current (Program/Erase)
Program/Erase
Controller active
20
mA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
2
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 5.8mA
0.45
V
V
OH
Output High Voltage TTL
I
OH
= –2.5mA
2.4
V
Output High Voltage CMOS
I
OH
= –100
μ
A
V
CC
– 0.4
V
V
ID
Identification Voltage
11.5
12.5
V
I
ID
Identification Current
A9 = V
ID
100
μ
A
V
LKO(1)
Program/Erase Lockout Supply
Voltage
3.2
4.2
V
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| M29F016B90N3T | 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M29F016B90N3T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory |
| M29F016B90N6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory |
| M29F016D | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| M29F016D_05 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory |
| M29F016D55M1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory |
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