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参数资料
| 型号： | M29W040B70N1F |
| 厂商： | 意法半导体 |
| 英文描述： | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| 中文描述： | 4兆位512KB的× 8，统一座低电压单电源闪存 |
| 文件页数： | 1/20页 |
| 文件大小： | 161K |
| 代理商： | M29W040B70N1F |
1/20
September 2005
M29W040B
4 Mbit (512Kb x8, Uniform Block)
Low Voltage Single Supply Flash Memory
■
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
■
ACCESS TIME: 55ns
■
PROGRAMMING TIME
– 10s per Byte typical
■
8 UNIFORM 64 Kbytes MEMORY BLOCKS
■
PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
■
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
■
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■
LOW POWER CONSUMPTION
– Standby and Automatic Standby
■
100,000 PROGRAM/ERASE CYCLES per
BLOCK
■
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
■
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: E3h
■
ECOPACK PACKAGES AVAILABLE
TSOP32 (N)
8 x 20mm
PLCC32 (K)
TSOP32 (NZ)
8 x 14mm
Figure 1. Logic Diagram
AI02953
19
A0-A18
W
DQ0-DQ7
VCC
M29W040B
G
E
VSS
8
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| M29W040B70N6E | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040B70N6F | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040B70N6 | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040B70NZ1E | 2A Standard Fixed Output LDO Regulators; Package: TO220FP-3; Constitution materials list: Packing style: Tube packaging; Package quantity: 50; Minimum package quantity: 500; |
| M29W040B70NZ1F | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M29W040B70N1T | 功能描述:闪存 4M (512Kx8) 70ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M29W040B70N6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040B70N6E | 功能描述:闪存 STD FLASH 4 MEG RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M29W040B70N6F | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040B70N6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
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