参数资料
型号: M29W200BT55M1E
厂商: 意法半导体
英文描述: 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Low Voltage Single Supply Flash Memory
中文描述: 2兆位(256Kb的x8或128KB的x16插槽,引导块)低电压单电源闪存
文件页数: 3/22页
文件大小: 175K
代理商: M29W200BT55M1E
3/22
M29W200BT, M29W200BB
The blocks in the memory are asymmetrically ar-
ranged, see Tables 3 and 4, Block Addresses. The
first or last 64 Kbytes have been divided into four
additional blocks. The 16 Kbyte Boot Block can be
used for small initialization code to start the micro-
processor, the two 8 Kbyte Parameter Blocks can
be used for parameter storage and the remaining
32K is a small Main Block where the application
may be stored.
Chip Enable, Output Enable and Write Enable sig-
nals control the bus operation of the memory.
They allow simple connection to most micropro-
cessors, often without additional logic.
The memory is offered in TSOP48 (12 x 20mm)
and SO44 packages and it is supplied with all the
bits erased (set to ’1’).
In order to meet environmental requirements, ST
offers the M29W200B in ECOPACK
packages.
ECOPACK packages are Lead-free. The category
of second Level Interconnect is marked on the
package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum rat-
ings related to soldering conditions are also
marked on the inner box label.
ECOPACK is an ST trademark. ECOPACK speci-
fications are available at: www.st.com.
Table 2. Absolute Maximum Ratings
(1)
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-
ity documents.
2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns during transitions.
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature (Temperature Range Option 1)
0 to 70
°C
Ambient Operating Temperature (Temperature Range Option 6)
–40 to 85
°C
T
BIAS
Temperature Under Bias
–50 to 125
°C
T
STG
Storage Temperature
–65 to 150
°C
V
IO (2)
Input or Output Voltage
–0.6 to 4
V
V
CC
Supply Voltage
–0.6 to 4
V
V
ID
Identification Voltage
–0.6 to 13.5
V
Table 3. Top Boot Block Addresses
M29W200BT
Size
(Kbytes)
6
16
3C000h-3FFFFh
5
8
3A000h-3BFFFh
4
8
38000h-39FFFh
3
32
30000h-37FFFh
2
64
20000h-2FFFFh
1
64
10000h-1FFFFh
0
64
00000h-0FFFFh
#
Address Range
(x8)
Address Range
(x16)
1E000h-1FFFFh
1D000h-1DFFFh
1C000h-1CFFFh
18000h-1BFFFh
10000h-17FFFh
08000h-0FFFFh
00000h-07FFFh
Table 4. Bottom Boot Block Addresses
M29W200BB
Size
(Kbytes)
(x8)
6
64
30000h-3FFFFh
5
64
20000h-2FFFFh
4
64
10000h-1FFFFh
3
32
08000h-0FFFFh
2
8
06000h-07FFFh
1
8
04000h-05FFFh
0
16
00000h-03FFFh
#
Address Range
Address Range
(x16)
18000h-1FFFFh
10000h-17FFFh
08000h-0FFFFh
04000h-07FFFh
03000h-03FFFh
02000h-02FFFh
00000h-01FFFh
相关PDF资料
PDF描述
M29W200BT55M1F 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Low Voltage Single Supply Flash Memory
M29W200BT70N6F 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Low Voltage Single Supply Flash Memory
M29W200BT90M1 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Low Voltage Single Supply Flash Memory
M29W200BT90M1E 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Low Voltage Single Supply Flash Memory
M29W200BT90M1F 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Low Voltage Single Supply Flash Memory
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