参数资料
型号: M29W800DB90N1T
厂商: 意法半导体
英文描述: Low-Power Configurable Multiple-Function Gate 6-SC70 -40 to 85
中文描述: 8兆(1兆x8或512KB的x16插槽,引导块)3V电源快闪记忆体
文件页数: 41/41页
文件大小: 219K
代理商: M29W800DB90N1T
41/41
M29W800DT, M29W800DB
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相关PDF资料
PDF描述
M29W800DB90N6T Low-Power Configurable Multiple-Function Gate 6-SC70 -40 to 85
M29W800DB90ZA1T Low-Power Configurable Multiple-Function Gate 6-SOT -40 to 85
M29W800DB90ZA6T Low-Power Configurable Multiple-Function Gate 6-SOT -40 to 85
M29W800DT Low-Power Configurable Multiple-Function Gate 6-DSBGA -40 to 85
M29W800DT70M1T Low-Power Configurable Multiple-Function Gate 6-SOT-23 -40 to 85
相关代理商/技术参数
参数描述
M29W800DB90N6 制造商:STMicroelectronics 功能描述:
M29W800DB90N6T 功能描述:IC FLASH 8MBIT 90NS 48TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN(2x3) 包装:管件 产品目录页面:1445 (CN2011-ZH PDF)
M29W800DT45N6E 功能描述:闪存 8 MBIT (1MB) 3V SUPPLY RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
M29W800DT45N6F 功能描述:闪存 STD FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
M29W800DT45N6F TR 制造商:Micron Technology Inc 功能描述:IC FLASH 8MBIT 45NS 48TSOP