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参数资料
| 型号： | M2S56D30AKT-75 |
| 厂商： | ELPIDA MEMORY INC |
| 元件分类： | DRAM |
| 英文描述： | 32M X 8 DDR DRAM, 0.75 ns, PDSO64 |
| 封装： | 0.40 MM PITCH, STSOP-64 |
| 文件页数： | 1/41页 |
| 文件大小： | 638K |
| 代理商： | M2S56D30AKT-75 |
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1
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
256M Double Data Rate Synchronous DRAM
M2S56D20/ 30/ 40AKT
DESCRIPTION
M2S56D20ATP / AKT is a 4-bank x 16777216-word x 4-bit,
M2S56D30ATP / AKT is a 4-bank x 8388608-word x 8-bit,
M2S56D40ATP/ AKT is a 4-bank x 4194304-word x 16-bit,
double data rate synchronous DRAM, with SSTL_2 interface. All control and address signals are referenced
to the rising edge of CLK.Input data is registered on both edges of data strobes, and output data and data
strobe are referenced on both edges of CLK. The M2S56D20/30/40A achieve very high speed data rate up to
166MHz(-60), 133MHz(-75A/-75) and are suitable for main memory in computer systems.
FEATURES
- VDD=VDDQ=2.5V+0.2V
- Double data rate architecture; two data transfers per clock cycle
- Bidirectional, data strobe (DQS) is transmitted/received with data
- Differential clock inputs (CLK and /CLK)
- DLL aligns DQ and DQS transitions
- Commands are entered on each positive CLK edge
- Data and data mask are referenced to both edges of DQS
- 4-bank operations are controlled by BA0, BA1 (Bank Address)
- /CAS latency- 2.0/2.5 (programmable)
- Burst length- 2/4/8 (programmable)
- Burst type- sequential / interleave (programmable)
- Auto precharge / All bank precharge is controlled by A10
- 8192 refresh cycles /64ms (4 banks concurrent refresh)
- Auto refresh and Self refresh
- Row address A0-12 / Column address A0-9,11(x4) / A0-9(x8) / A0-8(x16)
- SSTL_2 Interface
- Both 66-pin TSOP Package and 64-pin Small TSOP Package
M2S56D*0ATP: 0.65mm lead pitch 66-pin TSOP Package
M2S56D*0AKT: 0.4mm lead pitch 64-pin Small TSOP Package
- JEDEC standard
- Low Power for the Self Refresh Current
Ultra Low Power Version : ICC6 < 1mA ( -60UL , -75AU , -75UL )
Low Power Version
: ICC6 < 2mA ( -60L , -75AL , -75L )
Operating Frequencies
* CL = CAS(Read) Latency
Standard
DDR266B
DDR266A
133MHz
100MHz
133MHz
M2S56D20/30/40ATP - 75AU / - 75AL / - 75A
Max. Frequency
@CL=2.5 *
Max. Frequency
@CL=2.0 *
M2S56D20/30/40AKT - 75AU / - 75AL / - 75A
M2S56D20/30/40ATP - 75UL / - 75L / - 75
M2S56D20/30/40AKT - 75UL / - 75L / - 75
DDR333B
166MHz
133MHz
M2S56D20/30/40ATP - 60UL / - 60L / - 60
M2S56D20/30/40AKT - 60UL / - 60L / - 60
Elpida Memory, Inc. 2003
This Product became EOL in July, 2004.
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PDF描述 |
|---|---|
| M2V56S30ATP-6 | 32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M2S56D30AKT-75A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2S56D30AKT-75AL | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2S56D30AKT-75L | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2S56D30ATP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2S56D30ATP-10 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
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