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Description
Under
development
Mitsubishi microcomputers
M30201 Group
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
Preliminary
Flash Memory
The M30201 (flash memory version) contains the NOR type of flash memory that requires a high-voltage
VPP power supply for program/erase operations, in addition to the VCC power supply for device operation.
For this flash memory, three flash memory modes are available in which to read, program, and erase:
parallel I/O and standard serial I/O modes in which the flash memory can be manipulated using a program-
mer and a CPU rewrite mode in which the flash memory can be manipulated by the Central Processing Unit
(CPU). Each mode is detailed in the pages to follow.
In addition to the ordinary user ROM area to store a microcomputer operation control program, the flash
memory has a boot ROM area that is used to store a program to control rewriting in CPU rewrite and
standard serial I/O modes. This boot ROM area has had a standard serial I/O mode control program stored
in it when shipped from the factory. However, the user can write a rewrite control program in this area that
suits the user’s application system. This boot ROM area can be rewritten in only parallel I/O mode.
Figure AA-3. Block diagram of flash memory version
SFR
RAM
SFR
RAM
SFR
RAM
0000016
0040016
YYYYY16
DF00016
DFDFF16
XXXXX16
FFFFF16
M30201F6
XXXXX16
F400016
YYYYY16
00BFF16
Microcomputer mode
Parallel I/O mode
CPU rewrite mode
Standard serial I/O mode
Boot ROM
area
(3.5K bytes)
Boot ROM
area
(3.5K bytes)
User ROM
area
User ROM
area
User ROM
area
Collective
erasable/
programmable
area
Type No.
Note 1: In CPU rewrite and standard serial I/O modes, the user ROM is the only erasable/programmable area.
Note 2: In parallel I/O mode, the area to be erased/programmed can be selected by the address A17 input.
The user ROM area is selected when this address input is high and the boot ROM area is selected
when this address input is low.
Collective
erasable/
programmable
area
Collective
erasable/
programmable
area