参数资料
型号: M3035S-E3/4W
厂商: Vishay General Semiconductor
文件页数: 3/3页
文件大小: 141K
描述: DIODE SCHOTTKY 30A 35V SGL TO-22
标准包装: 1,000
二极管类型: 肖特基
电压 - (Vr)(最大): 35V
电流 - 平均整流 (Io): 30A
电压 - 在 If 时为正向 (Vf)(最大): 700mV @ 30A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 200µA @ 35V
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
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3o
3
01
Pulse Width : 300 us1 u/0 Duty Cycle
Instantaneous Forward Current (A)
0.010 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 09Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Fcrvvard Characteristics
A 1000<(EE 100Q50 10G)Eg 1CE3 0O 10)§E 0.01N17:E0.00110 20 30 40 50 60 70 80 90 100Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
10 000
1000
Junction Capacitance (pF)
1000.1 1 10 100Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Revision: 15-Oct-12
M(B,|)3035S, M(B,|)3045S
Vishay General Semiconductor
3
Transient Thermal Impedance (“C/W)
t- Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
3
Transient Thermal Impedance (“C/W)
t- Pulse Duration (s)
Fig. 7 - Typical Transient Thermal Impedance
Document Number: 88952
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